Issue 2/2016
Content (40 Articles)
Performance analysis of multilayer graphene nanoribbon (MLGNR) interconnects
Mayank Kumar Rai, Ashoke Kumar Chatterjee, Sankar Sarkar, B. K. Kaushik
Reduced thickness interconnect model using GNR to avoid crosstalk effects
Sandip Bhattacharya, Debaprasad Das, Hafizur Rahaman
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
Amir Hossein Bayani, Daryoosh Dideban, Negin Moezi
A modified macro model approach for SPICE based simulation of single electron transistor
Arpita Ghosh, Amit Jain, N. Basanta Singh, Subir Kumar Sarkar
Thermally aware performance analysis of single-walled carbon nanotube bundle as VLSI interconnects
Mayank Kumar Rai, Brajesh Kumar Kaushik, Sankar Sarkar
Towards the design of hybrid QCA tiles targeting high fault tolerance
Bibhash Sen, Manojit Dutta, Rijoy Mukherjee, Rajdeep Kumar Nath, Amar Prakash Sinha, Biplab K. Sikdar
A signal distribution grid for quantum-dot cellular automata
Douglas Tougaw, Justin Szaday, Jeffrey D. Will
A novel robust exclusive-OR function implementation in QCA nanotechnology with energy dissipation analysis
Gurmohan Singh, R. K. Sarin, Balwinder Raj
DFT studies of electronic structure and dielectric properties in layered perovskite
Jun Zhou, Weiwei Fan, Qiang Zhou, Kai Wu, Yonghong Cheng
Composition dependence of fundamental properties of Te magnetic semiconductor alloys
S. Zerroug, A. Gueddim, N. Bouarissa
EE-BESD: molecular FET modeling for efficient and effective nanocomputing design
A. Zahir, A. Pulimeno, D. Demarchi, M. Ruo Roch, G. Masera, M. Graziano, G. Piccinini
Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications
Yogesh Pratap, Rajni Gautam, Subhasis Haldar, R. S. Gupta, Mridula Gupta
Dielectric pocket double gate junctionless FET: a new MOS structure with improved subthreshold characteristics for low power VLSI applications
Balraj Singh, Deepti Gola, Ekta Goel, Sanjay Kumar, Kunal Singh, Satyabrata Jit
Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs
Hamdam Ghanatian, Seyed Ebrahim Hosseini
Analytical modeling of threshold voltage for symmetrical silicon nano-tube field-effect-transistors (Si-NT FETs)
Pramod Kumar Tiwari, Visweswara Rao Samoju, Thandva Sunkara, Sarvesh Dubey, Satyabrata Jit
A novel double-gate SOI MOSFET to improve the floating body effect by dual SiGe trench
Ali A. Orouji, Atefeh Rahimifar, Mohammad Jozi
Continuum model of the potential of charge carriers in a bent piezoelectric ZnO nanowire: analytic and numerical study
Seong Min Kim, Jaewook Ha, Jin-baek Kim
Theoretical study of anthoxanthin dyes for dye sensitized solar cells (DSSCs)
M. Megala, Beulah J. M. Rajkumar
Control of gold nano-domes to design an all-optical switch by simultaneously binary and continuous operated optimization
Rasoul Keshavarzi, Farzin Emami
A comprehensive study of bipolar operation in resistive switching memory devices
Dan Berco, Tseung-Yuen Tseng
A numerical analysis of progressive and abrupt reset in conductive bridging RRAM
Dan Berco, Tseung-Yuen Tseng
A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr RRAM
Dan Berco, Tseung-Yuen Tseng
Modeling and simulation of graphene-oxide-based RRAM
Ee Wah Lim, Mohammad Taghi Ahmadi, Razali Ismail
A novel high breakdown voltage LDMOS by protruded silicon dioxide at the drift region
Meysam Zareiee, Ali A. Orouji, Mahsa Mehrad
Design of U-shaped feed structured antenna for ultrawideband application
M. N. Shakib, M. Moghavvemi, W. N. L. Mahadi
0.22 THz two-stage cascaded staggered double-vane traveling-wave tube
Guangsheng Deng, Ping Chen, Jun Yang, Zhiping Yin, Jiufu Ruan
Large-signal characterization of millimeter-wave IMPATTs: effect of reduced impact ionization rate of charge carriers due to carrier-carrier interactions
Prasit Kumar Bandyopadhyay, Subhendu Chakraborty, Arindam Biswas, Aritra Acharyya, A. K. Bhattacharjee
Modeling and simulation of cylindrical surrounding double-gate (CSDG) MOSFET with vacuum gate dielectric for improved hot-carrier reliability and RF performance
Jay Hind Kumar Verma, Subhasis Haldar, R. S. Gupta, Mridula Gupta
Model for threshold voltage instability in top-gated nanocrystalline silicon thin film transistor
Prachi Sharma, Navneet Gupta
The Monte Carlo simulation of the hole transport in thin films of PFO:MEH-PPV
Mohsen Bahrami, Ezeddin Mohajerani
Introducing a novel model based on particle wave duality for energy dissipation analysis in MQCA circuits
Mohammad Nabi Mohammadi, Reza Sabbaghi-Nadooshan
Properties of electron transmission through serially connected hexagonal nanorings
Matthew B. Orvis, Eric R. Hedin, Yong S. Joe
Nested dissection solver for transport in 3D nano-electronic devices
Y. Zhao, U. Hetmaniuk, S. R. Patil, J. Qi, M. P. Anantram