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2018 | OriginalPaper | Buchkapitel

35 W GaN Solid-State Driver Power Amplifier for L-Band Radar Applications

verfasst von : Vivek Ratnaparkhi, Anil Hiwale

Erschienen in: Intelligent Computing and Information and Communication

Verlag: Springer Singapore

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Abstract

In this paper, 35 W driver power amplifier was designed and simulated using GaN HEMT for L-band radar. GaN HEMT is used because it can provide high output power and high gain as compared to other semiconductor technologies. The 35 W output power is generated using CGHV40030 GaN HEMT which is sufficient to drive further stages of power amplifier. The driver amplifier is designed at 1.3 GHz of center frequency. This amplifier is designed in class AB and 60.5% of PAE is achieved.

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Literatur
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4.
Zurück zum Zitat Ken Kikkuchi et al., “An X-Band 300-Watt Class High Power GaN HEMT Amplifier for Radar Applications”, SEI Technical Review, Number 81, October 2015, pp. 40–44. Ken Kikkuchi et al., “An X-Band 300-Watt Class High Power GaN HEMT Amplifier for Radar Applications”, SEI Technical Review, Number 81, October 2015, pp. 40–44.
5.
Zurück zum Zitat Francesco Fornetti “Characterisation and performance optimization of GaN HEMTs and amplifiers for Radar applications” December 2010. Francesco Fornetti “Characterisation and performance optimization of GaN HEMTs and amplifiers for Radar applications” December 2010.
6.
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Zurück zum Zitat George Solomon et al., “The VSX3622, a 1.5 kW X-band GaN Power Amplifier for Radar Application”, Communications & Power Industries LLC, Beverly Microwave Division. George Solomon et al., “The VSX3622, a 1.5 kW X-band GaN Power Amplifier for Radar Application”, Communications & Power Industries LLC, Beverly Microwave Division.
Metadaten
Titel
35 W GaN Solid-State Driver Power Amplifier for L-Band Radar Applications
verfasst von
Vivek Ratnaparkhi
Anil Hiwale
Copyright-Jahr
2018
Verlag
Springer Singapore
DOI
https://doi.org/10.1007/978-981-10-7245-1_1

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