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2010 | OriginalPaper | Buchkapitel

9. Acceleration Factor Modeling

verfasst von : J.W. McPherson

Erschienen in: Reliability Physics and Engineering

Verlag: Springer US

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Abstract

In reliability physics and engineering, the development and use of the acceleration factor is fundamentally important to the theory of accelerated testing. The acceleration factor permits one to take time-to-failure data, very rapidly under accelerated stress conditions, and then to be able to extrapolate the accelerated time-to-failure results (into the future) for a given set of operational conditions. Since experimental determination of the acceleration factor could actually take many years, the acceleration factor must be modeled using the time-to-failure (TF) models introduced in Chapter 4. Since the acceleration factor must be modeled, it brings up another important question — how does one build some conservatism into the models, without being too conservative?

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Fußnoten
1
Note: for the reliability engineer, this is very exciting because the acceleration factor permits one to effectively take a crystal-ball look into the future as to what will happen!
 
2
Time-to-failure for materials/devices is strongly process dependent. Small micro-structural differences in the material can lead to device-to-device variations producing different times-to-failure.
 
3
Kinetic values are given in Chapters 11 and 12 for various failure mechanisms. Also, kinetic values (n,γ,Q) for various failure mechanisms can be found in reference materials, e.g., the IEEE International Reliability Physics Symposium Proceedings.
 
4
The fact that the acceleration factor depends only on the kinetics of failure (n,γ,Q) and not on device-to-device variation (due to slight materials/process differences) is very important. This means that, for a single failure mechanism, all devices of the time-to-failure distribution should be accelerated by the same amount.
 
5
An example of the physics of failure changing can be easily found from electromigration-induced failure in aluminum metallizations (discussed in Chapter 11). At relatively low temperatures, the Al-ion transport is dominated by grain-boundary diffusion with activation energy Qgb. At much higher temperatures, the transport is dominated by bulk (within-grain or lattice) diffusion with activation energy Qbulk, where: Qbulk > Qgb.
 
Literatur
Zurück zum Zitat McPherson, J.: Accelerated Testing. In: Electronic Materials Handbook, Vol. 1 Packaging, ASM International, 887 (1989). McPherson, J.: Accelerated Testing. In: Electronic Materials Handbook, Vol. 1 Packaging, ASM International, 887 (1989).
Zurück zum Zitat McPherson, J.: Reliability Physics. In: Handbook of Semiconductor Manufacturing Technology, 2 nd Ed., Marcel Dekker, 959 (2000). McPherson, J.: Reliability Physics. In: Handbook of Semiconductor Manufacturing Technology, 2 nd Ed., Marcel Dekker, 959 (2000).
Zurück zum Zitat McPherson, J.: Reliability Physics and Engineering. In: Handbook of Semiconductor Manufacturing Technology, 2 CRC Press, 30-1 (2008). McPherson, J.: Reliability Physics and Engineering. In: Handbook of Semiconductor Manufacturing Technology, 2 CRC Press, 30-1 (2008).
Metadaten
Titel
Acceleration Factor Modeling
verfasst von
J.W. McPherson
Copyright-Jahr
2010
Verlag
Springer US
DOI
https://doi.org/10.1007/978-1-4419-6348-2_9

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