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Erschienen in:
GaN Substrate Material for III–V Semiconductor Epitaxy Growth Kapitel lesen Erstes Kapitel lesen

2019 | OriginalPaper | Buchkapitel

7. Al-Rich III-Nitride Materials and Ultraviolet Light-Emitting Diodes

verfasst von : Jianchang Yan, Junxi Wang, Yuhuai Liu, Jinmin Li

Erschienen in: Light-Emitting Diodes

Verlag: Springer International Publishing

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Abstract

Aluminum nitride (AlN) material is commonly used as a crucial template for the growth of high-quality Al-rich III-nitride materials and high-performance deep-ultraviolet light-emitting diodes (DUV LEDs). In this chapter, the heteroepitaxy of AlN film by MOVPE and the development of AlN epitaxy techniques on sapphire substrates are discussed. The structural design for efficient DUV LEDs is then introduced. Since bulk AlN substrates are a perfect candidate for AlGaN-based DUV LEDs due to similar thermal expansion coefficients and relatively small lattice mismatches, we also discussed AlN homoepitaxy, pseudomorphic AlGaN, and DUV LEDs on AlN substrates. The limited light extraction efficiency (LEE) is another obstacle for power DUV LEDs and their applications. The intrinsic Al-rich-induced optical polarization effect and related methods for improving the LEE are presented.

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Vorheriges Kapitel The InGaN Material System and Blue/Green Emitters
Nächstes Kapitel Technology and Droop Study for High Internal Quantum Efficiency
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Metadaten
Titel
Al-Rich III-Nitride Materials and Ultraviolet Light-Emitting Diodes
verfasst von
Jianchang Yan
Junxi Wang
Yuhuai Liu
Jinmin Li
Copyright-Jahr
2019
Verlag
Springer International Publishing
Buch
Light-Emitting Diodes

Print ISBN: 978-3-319-99210-5

Electronic ISBN: 978-3-319-99211-2

Copyright-Jahr: 2019

DOI
https://doi.org/10.1007/978-3-319-99211-2_7

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