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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 8/2015

01.08.2015

Analysis of direct current performance on N-polar GaN-based high-electron-mobility transistors for next-generation optoelectronic devices

verfasst von: Cong Liu, Chong Wang, Xiaoyao Chen, Yu Yang

Erschienen in: Optical and Quantum Electronics | Ausgabe 8/2015

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Abstract

Exhibiting extremely high electric polarization, N-polar Group III-nitrides heterostructure has been widely used on high-electron-mobility transistors (HEMTs) and terahertz photodetectors in recent years. In this paper, we numerically investigated an N-polar GaN/AlGaN/GaN HEMT device in which the two-dimension electron gas is induced at the top GaN/AlGaN interface. Characteristics of the device were determined by using experimental data to calibrate the few adjustable parameters of our simulations. Effects of interface charges on the device were researched by changing the component of Al. In addition, the dependency of scaling the device dimensions on direct current (DC) output characteristics, such as the gate length and the barrier height was also analyzed in details. Our simulations showed that increases of Al mole fraction and AlGaN barrier height and a decrease of the gate length can improve the DC performance of HEMT device to some extent. That could be a significant guidance for designing or optimizing the structure of N-polar GaN-based devices.
Vorheriger Artikel Physical properties of Mo-doped ZnO by first principles and Boltzmann equations
Nächster Artikel Continuous phase modulation with chaotic interleaving for optical OFDM systems

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Literatur
Ambacher, O., Smart, J., Shealy, J.R., Weimann, N.G., Chu, K., Murphy, M., Schaff, W.J., Eastman, L.F., Dimitrov, R., Wittmer, L., Stutzmann, M., Rieger, W., Hilsenbeck, J.: Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures. J. Appl. Phys. 85, 3222–3233 (2000)
Ancona, M.G., Tiersten, H.F.: Macroscopic physics of the silicon inversion layer. Phys. Rev. B. 35, 7959 (1987)CrossRefADS
Bernardini, F., Fiorentini, V., Vanderbilt, D.: Spontaneous polarization and piezoelectric constants of III–V nitrides. Phys. Rev. B 56, 10024 (1997)CrossRefADS
Braga, N., Mickevicius, R., Gaska, R., Hu, X., Shur, M.S., Khan, M.A., Simin, G., Yang, J.: Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors. J. Appl. Phys. 95, 6409–6413 (2004)
Bykhovski, A., Gelmont, B., Shur, M.S.: Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices. J. Appl. Phys. 74, 6734 (1993)CrossRefADS
Chung, J.W., Piner, E.L., Palacios, T.: N-face GaN/AlGaN HEMTs fabricated through layer transfer technology. IEEE Electron Device Lett. 30, 113–116 (2009)CrossRefADS
DESSIS ISE TCAD Manual.: Release 10.0_ISE Integrated Systems Engineering AG, Zurich (2005)
Ferry, D.K., Zhou, J.R.: Form of the quantum potential for use in hydrodynamic equations for semiconductor device modeling. Phys. Rev. B 48, 7944 (1993)CrossRefADS
Guerra, D., Saraniti, M., Faralli, N., Ferry, D.K., Goodnick, S.M., Marino, F.A.: Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations. IEEE Trans. Electron Devices 57, 3348–3354 (2010)CrossRefADS
Guo, N., Hu, W.D., Chen, X.S., Wang, L., Lu, W.: Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates. Opt. Express 21, 1606–1614 (2013)CrossRefADS
Hu, W.D., Chen, X.S., Quan, Z.J., Zhang, X.M., Huang, Y., Xia, C.S., Lu, W., Ye, P.D.: Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects. J. Appl. Phys. 100, 074501 (2006)CrossRefADS
Hu, W.D., Chen, X.S., Yin, F., Zhang, J.B., Lu, W.: Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors. J. Appl. Phys. 105, 084502 (2009)CrossRefADS
Hu, W.D., Wang, L., Chen, X.S., Guo, N., Miao, J.S., Yu, A.Q., Lu, W.: Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain. Opt. Quantum Electron. 45, 713–720 (2013)CrossRef
Khan, M.A., Bhattarai, A., Kuznia, J.N., Olson, D.T.: High electron mobility transistor based on a GaN-Al  x Ga1−x N heterojunctio. Appl. Phys. Lett. 63, 1214–1215 (1993)CrossRefADS
Kolluri, S., Keller, S., DenBaars, S.P., Mishra, U.K.: Microwave power performance N-polar GaN MISHEMTs grown by MOCVD on SiC substrates using an Al2O3 etch-stop technology. IEEE Electron Device Lett. 33, 44–46 (2012)CrossRefADS
Nidhi, S., Dasgupta, D.F., Brown, U., Singisetti, S., Keller, J.S., Speck, Mishra, U.K.: Self-aligned technology for N-polar GaN/Al(Ga)N MIS-HEMTs. IEEE Electron Device Lett. 32, 33–35 (2011a)CrossRefADS
Nidhi, S., Dasgupta, S., Keller, J.S., Speck, Mishra, U.K.: Scaled self-aligned N-polar GaN/AlGaN MIS-HEMTs with f T of 275 GHz. IEEE Electron Device Lett. 32, 1683–1685 (2011b)CrossRefADS
Nidhi, S., Dasgupta, B.L., Swenson, D.F., Brown, S., Keller, J., Speck, Mishra, U.K.: f T and f MAX of 47 and 81 GHz respectively, on N-Polar GaN/AlN MIS-HEMT. IEEE Electron Device Lett. 30, 599–601 (2009)CrossRefADS
Onojima, N., Hirose, N., Mimura, T., Matsui, T.: High off-state breakdown voltage 60-nm-long-gate AlGaN/GaN heterostructure field-effect transistors with AlGaN back-barrier. J. Appl. Phys. 48, 094502 (2009)CrossRef
Pal, J., Tse, G., Haxha, V., Migliorato, M.A., Tomic, S.: GaN-based bipolar cascade light-emitting diode with 250 % peak quantum efficiency. Opt. Quantum Electron. 44, 195–203 (2014)CrossRef
Peng, E., Wang, X., Xiao, H., Wang, C., Yin, H., Chen, H., Feng, C., Jiang, L., Qu, S., Kang, H., Hou, X., Wang, Z.: Tunable density of two-dimensional electron gas in GaN-based heterostructures: the effects of buffer acceptor and channel width. J. Appl. Phys. 114, 154507 (2013)CrossRefADS
Quan, Z.J., Wang, L., Zheng, C., Liu, J., Jiang, F.: Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes. J. Appl. Phys. 116, 183107 (2014)CrossRef
Rajan, S., Chini, A., Wong, M.H., Speck, J.S., Mishra, U.K.: N-polar GaN/AlGaN/GaN high electron mobility transistors. J. Appl. Phys. 102, 044501 (2007)CrossRefADS
Rajan, S., Wong, M., Fu, Y., Wu, F., Speck, J.S., Mishra, U.K.: Growth and electrical characterization of N-face AlGaN/GaN heterostructures. J. Appl. Phys. 44, L1478–L1480 (2005)CrossRefADS
Singisetti, U., Wong, M.H., Dasgupta, S., et al.: Enhancement-mode N-polar GaN MISFETs with self-aligned source/drain regrowth. IEEE Electron Device Lett. 32, 137–139 (2011)CrossRefADS
Sumiya, M., Yoshimura, K., Ito, T., Ohtsuka, K., Fuke, S., Mizuno, K., Yoshimoto, M., Koinuma, H., Ohtomo, A., Kawasaki, M.: Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate. J. Appl. Phys. 88, 1158–1165 (2000)CrossRefADS
Wang, M.J., Chen, K.J.: Improvement of the off-state breakdown voltage with fluorine ion implantation in AlGaN/GaN HEMTs. IEEE Trans. Electron Devices 58, 460–465 (2011)CrossRef
Wang, C., He, Y.L., Ding, N., Zheng, X.F., Zhang, P., Ma, X.H., Zhang, J.C., Hao, Y.: Simulation and experimentation for low density drain AlGaN/GaN HEMT. Chin. Phys. Lett. 31, 038501 (2014)CrossRefADS
Wang, X.D., Hu, W.D., Chen, X.S., Lu, W.: The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs. IEEE Trans. Electron Devices 59, 1393–1401 (2012)CrossRefADS
Wong, M.H., Pei, Y., Palacios, T., Shen, L., Chakraborty, A., McCarthy, L.S., Keller, S., DenBaars, S.P., Speck, J.S., Mishra, U.K.: Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth. Appl. Phys. Lett. 91, 232103 (2007)CrossRefADS
Yan, J., Wang, X., Wang, Q., Qu, S., Xiao, H., Peng, E., Kang, H., Wang, C., Feng, C., Yin, H., Jiang, L., Li, B., Wang, Z., Hou, X.: Two-dimensional electron and hole gases in In x Ga1  − x N/Al y Ga1  − y N/GaN heterostructure for enhancement mode operation. J. Appl. Phys. 116, 054502 (2014)CrossRefADS
Zhang, Y., Feng, S.W., Zhu, H., Guo, C.S., Deng, B., Zhang, G.C.: Effect of self-heating on the drain current transient response in AlGaN/GaN HEMTs. IEEE Electron Device Lett. 35, 345–347 (2014a)CrossRefADS
Zhang, R., Zhao, W.S., Yin, W.Y.: Investigation on thermo-mechanical responses in high power multi-finger AlGaN/GaN HEMTs. Microelectron. Reliab. 54, 575–581 (2014b)CrossRef
Metadaten
Titel
Analysis of direct current performance on N-polar GaN-based high-electron-mobility transistors for next-generation optoelectronic devices
verfasst von
Cong Liu
Chong Wang
Xiaoyao Chen
Yu Yang
Publikationsdatum
01.08.2015
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 8/2015
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-015-0128-z

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