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Erschienen in:
Damping in Materials and Structures: An Overview Kapitel lesen Erstes Kapitel lesen

2018 | OriginalPaper | Buchkapitel

13. Bending of a Cantilever Piezoelectric Semiconductor Fiber Under an End Force

verfasst von : Chunli Zhang, Xiaoyuan Wang, Weiqiu Chen, Jiashi Yang

Erschienen in: Generalized Models and Non-classical Approaches in Complex Materials 2

Verlag: Springer International Publishing

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Abstract

This paper presents a theoretical analysis on the bending and shear of a cantilever ZnO piezoelectric semiconductor fiber under a transverse end force. The phenomenological theory of piezoelectric semiconductors consisting of Newton’s second law of motion, the charge equation of electrostatics, and the conservation of charge of electrons and holes is used. The equations are linearized for a small end force and small electromechanical fields as well as small carrier concentration perturbations. A first-order, one-dimensional theory for the bending of ZnO fibers with shear deformation is derived from the linearized three-dimensional equations. An analytical solution is obtained. The electromechanical fields and carrier concentrations are calculated. It is found that the electric potential is nearly constant along the fiber except near the fixed end of the cantilever, and that the electron distribution over a cross section is due to the transverse shear force and the piezoelectric constant e24.

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Vorheriges Kapitel Generalized Continua Concepts in Coarse-Graining Atomistic Simulations
Nächstes Kapitel Contact Mechanics in the Framework of Couple Stress Elasticity
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Metadaten
Titel
Bending of a Cantilever Piezoelectric Semiconductor Fiber Under an End Force
verfasst von
Chunli Zhang
Xiaoyuan Wang
Weiqiu Chen
Jiashi Yang
Copyright-Jahr
2018
Verlag
Springer International Publishing
Buch
Generalized Models and Non-classical Approaches in Complex Materials 2

Print ISBN: 978-3-319-77503-6

Electronic ISBN: 978-3-319-77504-3

Copyright-Jahr: 2018

DOI
https://doi.org/10.1007/978-3-319-77504-3_13

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