Skip to main content
Erschienen in: Journal of Nanoparticle Research 1/2010

01.01.2010 | Research Paper

Blue electroluminescence nanodevice prototype based on vertical ZnO nanowire/polymer film on silicon substrate

verfasst von: Ying He, Jun-An Wang, Xiao-Ban Chen, Wen-Fei Zhang, Xu-Yu Zeng, Qiu-Wen Gu

Erschienen in: Journal of Nanoparticle Research | Ausgabe 1/2010

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

We present a polymer-complexing soft template technique to construct the ZnO-nanowire/polymer light emitting device prototype that exhibits blue electrically driven emission with a relatively low-threshold voltage at room temperature in ambient atmosphere, and the ZnO-nanowire-based LED’s emission wavelength is easily tuned by controlling the applied-excitation voltage. The nearly vertically aligned ZnO-nanowires with polymer film were used as emissive layers in the devices. The method uses polymer as binder in the LED device and dispersion medium in the luminescence layer, which stabilizes the quasi-arrays of ZnO nanowires embedding in a thin polymer film on silicon substrate and passivates the surface of ZnO nanocrystals, to prevent the quenching of luminescence. Additionally, the measurements of electrical properties showed that ZnO-nanowire/polymer film could significantly improve the conductivity of the film, which could be attributed to an increase in both Hall mobility and carrier concentration. The results indicated that the novel technique is a low-cost process for ZnO-based UV or blue light emission and reduces the requirement for achieving robust p-doping of ZnO film. It suggests that such ZnO-nanowire/polymer-based LEDs will be suitable for the electro-optical application.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Literatur
Zurück zum Zitat Burroughes JH, Bradley DDC, Brown AR, Marks RN, Mackay K, Friend RH, Holmes AB (1990) Light-emitting diodes based on conjugated polymers. Nature 347(6293):539–541. doi:10.1038/347539a0 CrossRefADS Burroughes JH, Bradley DDC, Brown AR, Marks RN, Mackay K, Friend RH, Holmes AB (1990) Light-emitting diodes based on conjugated polymers. Nature 347(6293):539–541. doi:10.​1038/​347539a0 CrossRefADS
Zurück zum Zitat Chang CY, Tsao FC, Pan CJ, Chi GC, Wang HT, Chen JJ, Ren F, Norton DP, Pearton SJ, Chen KH, Chen LC (2006) Electroluminescence from ZnO nanowire/polymer composite p-n junction. Appl Phys Lett 88 (17): 173503 Chang CY, Tsao FC, Pan CJ, Chi GC, Wang HT, Chen JJ, Ren F, Norton DP, Pearton SJ, Chen KH, Chen LC (2006) Electroluminescence from ZnO nanowire/polymer composite p-n junction. Appl Phys Lett 88 (17): 173503
Zurück zum Zitat Dev A, Panda SK, Kar S, Chakrabarti S, Chaudhuri S (2006) Surfactant-assisted route to synthesize well-aligned ZnO nanorod arrays on sol-gel-derived ZnO thin films. J Phys Chem B 110(29):14266–14272. doi:10.1021/jp062729l CrossRefPubMed Dev A, Panda SK, Kar S, Chakrabarti S, Chaudhuri S (2006) Surfactant-assisted route to synthesize well-aligned ZnO nanorod arrays on sol-gel-derived ZnO thin films. J Phys Chem B 110(29):14266–14272. doi:10.​1021/​jp062729l CrossRefPubMed
Zurück zum Zitat Guo XL, Choi JH, Tabata H, Kawai T (2001) Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode. Jpn J Appl Phys Part 2 40 (3A): 177–180 Guo XL, Choi JH, Tabata H, Kawai T (2001) Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode. Jpn J Appl Phys Part 2 40 (3A): 177–180
Zurück zum Zitat Kim H, Cepler A, Osofsky MS, Auyeung RCY, Piqué A (2007) Fabrication of Zr-N codoped p-type ZnO thin films by pulsed laser deposition. Appl Phys Lett 90 (20): 203508–1–3 Kim H, Cepler A, Osofsky MS, Auyeung RCY, Piqué A (2007) Fabrication of Zr-N codoped p-type ZnO thin films by pulsed laser deposition. Appl Phys Lett 90 (20): 203508–1–3
Zurück zum Zitat Lim JH, Kang CK, Kim KK, Park IK, Hwang DK, Park SJ (2006) UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering. Adv Mater 18(20):2720–2724. doi:10.1002/adma.200502633 CrossRef Lim JH, Kang CK, Kim KK, Park IK, Hwang DK, Park SJ (2006) UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering. Adv Mater 18(20):2720–2724. doi:10.​1002/​adma.​200502633 CrossRef
Zurück zum Zitat Ohta H, Mizoguchi H, Hirano M, Narushima S, Kamiya T, Hosono H (2003) Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO. Appl Phys Lett 82(5):823–825. doi:10.1063/1.1544436 CrossRefADS Ohta H, Mizoguchi H, Hirano M, Narushima S, Kamiya T, Hosono H (2003) Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO. Appl Phys Lett 82(5):823–825. doi:10.​1063/​1.​1544436 CrossRefADS
Zurück zum Zitat Ryu YR, Lee TS, Leem JH, White HW (2003) Fabrication of homostructural ZnO p-n junctions and ohmic contacts to arsenic-doped p-type ZnO. Appl Phys Lett 83(19):4032–4034. doi:10.1063/1.1625787 CrossRefADS Ryu YR, Lee TS, Leem JH, White HW (2003) Fabrication of homostructural ZnO p-n junctions and ohmic contacts to arsenic-doped p-type ZnO. Appl Phys Lett 83(19):4032–4034. doi:10.​1063/​1.​1625787 CrossRefADS
Zurück zum Zitat Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu SF, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M (2005) Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat Mater 4(1):42–45. doi:10.1038/nmat1284 CrossRefPubMedADS Tsukazaki A, Ohtomo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu SF, Fuke S, Segawa Y, Ohno H, Koinuma H, Kawasaki M (2005) Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO. Nat Mater 4(1):42–45. doi:10.​1038/​nmat1284 CrossRefPubMedADS
Metadaten
Titel
Blue electroluminescence nanodevice prototype based on vertical ZnO nanowire/polymer film on silicon substrate
verfasst von
Ying He
Jun-An Wang
Xiao-Ban Chen
Wen-Fei Zhang
Xu-Yu Zeng
Qiu-Wen Gu
Publikationsdatum
01.01.2010
Verlag
Springer Netherlands
Erschienen in
Journal of Nanoparticle Research / Ausgabe 1/2010
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-009-9591-4

Weitere Artikel der Ausgabe 1/2010

Journal of Nanoparticle Research 1/2010 Zur Ausgabe

    Marktübersichten

    Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.