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Journal of Nanoparticle Research
Erschienen in: Journal of Nanoparticle Research 12/2012

01.12.2012 | Research Paper

Catalyst-free direct growth of InP quantum dots on Si by MOCVD: a step toward monolithic integration

verfasst von: Nripendra N. Halder, Souvik Kundu, Rabibrata Mukherjee, D. Biswas, P. Banerji

Erschienen in: Journal of Nanoparticle Research | Ausgabe 12/2012

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Abstract

InP quantum dots (QDs) were grown on catalyst-free Si substrates by MOCVD to study the behavior of growth of low dimensional III–V structures on Si substrates. It is found that at temperature 575 °C, uniform QDs with diameter 20–50 nm and height 6–8 nm were obtained, whereas at 600 °C, InP nanoislands with wetting layers were formed instead of QDs. From the photoluminescence measurements, blue shift of the band gap is observed with a value of 1.395 eV. The densities of the QDs were found to be 7–8 × 1013 m−2. X-ray photoelectron spectroscopy establishes the presence of InP rather than indium droplet. X-ray diffraction spectra show different surface planes of the QDs. The effect of growth temperature has been discussed.
Vorheriger Artikel Studies of the photostability of CdSe/CdS dot-in-rod nanoparticles
Nächster Artikel Bleached and unbleached MFC nanobarriers: properties and hydrophobisation with hexamethyldisilazane

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Metadaten
Titel
Catalyst-free direct growth of InP quantum dots on Si by MOCVD: a step toward monolithic integration
verfasst von
Nripendra N. Halder
Souvik Kundu
Rabibrata Mukherjee
D. Biswas
P. Banerji
Publikationsdatum
01.12.2012
Verlag
Springer Netherlands
Erschienen in
Journal of Nanoparticle Research / Ausgabe 12/2012
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-012-1279-5

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