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Erschienen in:
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2014 | OriginalPaper | Buchkapitel

4. CMOS Performance Issues

verfasst von : Hector Solar Ruiz, Roc Berenguer Pérez

Erschienen in: Linear CMOS RF Power Amplifiers

Verlag: Springer US

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Abstract

This chapter details how CMOS processes limit the performance of fully integrated linear PAs. The low V DD of modern, submicron CMOS processes, along with breakdown phenomena and hot carrier degradation, are the main limitations. On top of that, these limitations are also accompanied by other effects such as reduced output voltage headroom due to the V KNEE, the low quality factor of integrated inductor and transformers, transistor parasitics, substrate losses or stability issues. All these limitations have a direct impact on the linearity, the output power levels and the efficiency of PAs.

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Vorheriges Kapitel Power Amplifier Fundamentals: Classes
Nächstes Kapitel Enhancement Techniques for CMOS Linear PAs
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Metadaten
Titel
CMOS Performance Issues
verfasst von
Hector Solar Ruiz
Roc Berenguer Pérez
Copyright-Jahr
2014
Verlag
Springer US
Buch
Linear CMOS RF Power Amplifiers

Print ISBN: 978-1-4614-8656-5

Electronic ISBN: 978-1-4614-8657-2

Copyright-Jahr: 2014

DOI
https://doi.org/10.1007/978-1-4614-8657-2_4

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