Anzeige
Erschienen in:
2012 | OriginalPaper | Buchkapitel
CNT Based Channel Interconnect for CMOS Devices
verfasst von : Ginto Johnson, Vinod Pangracious
Erschienen in: Advances in Computer Science and Information Technology. Computer Science and Engineering
Verlag: Springer Berlin Heidelberg
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
MOSFET device dimensions and dimensions of interconnects have been scaled down to increase density, functionality and performance of a chip. Recently, scaling down of dimensions, that has now reached to the nano regime, have led to various issues like electromigration as in the case of interconnects and hot carrier effects, drain induced barrier lowering and so on in case of MOSFET’s. Researchers are thus trying to find other options for interconnects and also new architectures to replace the conventional MOSFET’s. This paper is a study of Carbon Nanotube which is gaining interest of researchers both as device interconnect and channel-interconnect. The behavior of CNT with length and diameter is considered. A study of various parameters like mobility, conductance etc. of the CNT is done. This paper focuses on CNT based FET’s, that are gaining interest as replacements for conventional CMOS, in many modern circuits and also new devices.