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Erschienen in:
2017 | OriginalPaper | Buchkapitel
Comparison of Scharfetter-Gummel Flux Discretizations Under Blakemore Statistics
verfasst von : Patricio Farrell, Thomas Koprucki, Jürgen Fuhrmann
Erschienen in: Progress in Industrial Mathematics at ECMI 2016
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Abstract
We discretize the semiconductor device equations assuming a Blakemore distribution function using a finite volume scheme and compare three thermodynamically consistent Scharfetter-Gummel type flux discretizations, namely the exact solution to a two-point boundary value probem and two fluxes incorporating certain averages. In order to do this, we simulate an n-i-n semiconductor device and study the electron densities as well as the total current. While the diffusion-enhanced flux approximation using logarithmic averaging of the nonlinear diffusion enhancement behaves somewhat similarly to the exact solution of the two-point boundary value problem (the generalized Scharfetter-Gummel scheme), the scheme based on averaging the inverse activity coefficients scheme exhibits a noticeably different behavior.