Skip to main content

2017 | OriginalPaper | Buchkapitel

14. Conclusions and Outlook

verfasst von : Yanjun Ma, Edwin Kan

Erschienen in: Non-logic Devices in Logic Processes

Verlag: Springer International Publishing

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

We conclude this book by looking at the potential directions that IC industry is going to continue the Moore’s law scaling and the associated impacts to the non-logic devices discussed in previous chapters. We first review the fundamental limits to the continued IC scaling, including those implied by the quantum mechanics and quantum information theory. As we close to those fundamental limits, two main directions that IC industry is moving toward include the use of the vertical dimension and new materials to build new ICs. The later approach has resulted in the development of many emerging memory technologies, including STT-RAM, PCRAM, and RRAM. Both directions could open up new opportunities for designing new non-logic devices. Finally new computing paradigms, including quantum computing, may usher in fundamentally new processes for building these new computing devices.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Fußnoten
1
This is the reason Intel has named their version of the finFET as tri-gate FET, and TSMC as Ω-FET.
 
Literatur
Zurück zum Zitat Anderson, P. (1958). Absence of diffusion in certain random lattices. Physical Review, 109, 1492–1505.CrossRef Anderson, P. (1958). Absence of diffusion in certain random lattices. Physical Review, 109, 1492–1505.CrossRef
Zurück zum Zitat Ganguly, U., Kan, E., & Zhang, Y. (2005). Carbon nanotube based non-volatile memory with charge storage in metal nanocrystals. Applied Physics Letters, 87, 043108.CrossRef Ganguly, U., Kan, E., & Zhang, Y. (2005). Carbon nanotube based non-volatile memory with charge storage in metal nanocrystals. Applied Physics Letters, 87, 043108.CrossRef
Zurück zum Zitat Guo, J., Kan, E., Ganguly, U., & Zhang, Y. (2006). High sensitivity and nonlinearity of carbon nanotube-based charge sensors. Journal of Applied Physics, 99, 084301.CrossRef Guo, J., Kan, E., Ganguly, U., & Zhang, Y. (2006). High sensitivity and nonlinearity of carbon nanotube-based charge sensors. Journal of Applied Physics, 99, 084301.CrossRef
Zurück zum Zitat Hisamoto, D. ; Lee, W.-C. ; Kedzierski, J. ; Anderson, E. ; Takeuchi, H. ; Asano, K. ; King, T.-J. ; Bokor, J. ; Hu, C. (1998). A folded-channel MOSFET for deep-sub-tenth micron era. In IEEE International Electron Device Meeting (pp. 1032–1034). Washington, DC: IEEE. Hisamoto, D. ; Lee, W.-C. ; Kedzierski, J. ; Anderson, E. ; Takeuchi, H. ; Asano, K. ; King, T.-J. ; Bokor, J. ; Hu, C. (1998). A folded-channel MOSFET for deep-sub-tenth micron era. In IEEE International Electron Device Meeting (pp. 1032–1034). Washington, DC: IEEE.
Zurück zum Zitat Jan, C.-H.; Bhattacharya, U.; Brain, R.; Choi, S.- J.; Curello, G.; Gupta, G.; Hafez, W.; Jang, M.; Kang, M.; Komeyli, K.; Leo, T.; Nidhi, N.; Pan, L.; Park, J.; Phoa, K.; Rahman, A.; Staus, C.; Tashiro, H.; Tsai, C.; Vandervoorn, P.; Yang, L.; Yeh, J.-Y. ; Bai, P. (2012). A 22nm SoC platform technology featuring 3-D Tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications. In IEEE International Electron Device Meeting (pp. 44–47). Washington, DC: IEEE. Jan, C.-H.; Bhattacharya, U.; Brain, R.; Choi, S.- J.; Curello, G.; Gupta, G.; Hafez, W.; Jang, M.; Kang, M.; Komeyli, K.; Leo, T.; Nidhi, N.; Pan, L.; Park, J.; Phoa, K.; Rahman, A.; Staus, C.; Tashiro, H.; Tsai, C.; Vandervoorn, P.; Yang, L.; Yeh, J.-Y. ; Bai, P. (2012). A 22nm SoC platform technology featuring 3-D Tri-gate and high-k/metal gate, optimized for ultra low power, high performance and high density SoC applications. In IEEE International Electron Device Meeting (pp. 44–47). Washington, DC: IEEE.
Zurück zum Zitat Kahan, M., Gil, B., Adar, R., & Shapiro, E. (2008). Towards molecular computers that operate in a biological environment. Physica D, 237, 1165–1172.MathSciNetCrossRefMATH Kahan, M., Gil, B., Adar, R., & Shapiro, E. (2008). Towards molecular computers that operate in a biological environment. Physica D, 237, 1165–1172.MathSciNetCrossRefMATH
Zurück zum Zitat Lee, B. Z. (2010). Phase-change technology and the future of main memory. IEEE Micro, 30, 131–141.CrossRef Lee, B. Z. (2010). Phase-change technology and the future of main memory. IEEE Micro, 30, 131–141.CrossRef
Zurück zum Zitat Lin, C. K., Wang, Y., Lee, K. Z., Chen, W., & Hsu, W. (2009). 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell. In IEDM Technical Digest (pp. 279–282). Washington, DC: IEEE. Lin, C. K., Wang, Y., Lee, K. Z., Chen, W., & Hsu, W. (2009). 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell. In IEDM Technical Digest (pp. 279–282). Washington, DC: IEEE.
Zurück zum Zitat Nielsen, M. C. (2010). Quantum computation and quantum information. Cambridge: Cambridge University Press.CrossRefMATH Nielsen, M. C. (2010). Quantum computation and quantum information. Cambridge: Cambridge University Press.CrossRefMATH
Zurück zum Zitat Wolf, S. A., Chtchelkanova, A. Y., & Treger, D. M. (2006). Spintronics—A retrospective and perspective. International Journal of Advance Research and Engineering, 50, 101–110. Wolf, S. A., Chtchelkanova, A. Y., & Treger, D. M. (2006). Spintronics—A retrospective and perspective. International Journal of Advance Research and Engineering, 50, 101–110.
Zurück zum Zitat Yuesa, S. (2013). Future prospects of MRAM technologies. In IEDM Technical Digest (pp. 56–59). Washington, DC: IEEE. Yuesa, S. (2013). Future prospects of MRAM technologies. In IEDM Technical Digest (pp. 56–59). Washington, DC: IEEE.
Metadaten
Titel
Conclusions and Outlook
verfasst von
Yanjun Ma
Edwin Kan
Copyright-Jahr
2017
DOI
https://doi.org/10.1007/978-3-319-48339-9_14

Neuer Inhalt