Anzeige
Erschienen in:
1988 | OriginalPaper | Buchkapitel
Dopant Diffusion and Segregation
verfasst von : Ted Kamins
Erschienen in: Polycrystalline Silicon for Integrated Circuit Applications
Verlag: Springer US
Enthalten in: Professional Book Archive
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
In a defect-free, single-crystal of silicon, dopant impurities diffuse into the perfect lattice structure by interacting with point defects, such as silicon vacancies and interstitials. In addition to the point defects in which exist in equilibrium with the crystal lattice, the point-defect concentration can also be influenced externally (eg, by injecting interstitials into the silicon lattice as the surface of the crystal is oxidized). These additional interstitials can significantly enhance the impurity diffusion rate in perfect crystals of silicon.