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Erschienen in:
2014 | OriginalPaper | Buchkapitel
Effect of Vertical and Longitudinal Electric Field on 2DEG of AlGaN/GaN HEMT on Silicon: A Qualitative Reliability Study
verfasst von : Ankush Bag, Partha Mukhopadhyay, Saptarsi Ghosh, Palash Das, Rahul Kumar, Sanjay K. Jana, Sanjib Kabi, Dhrubes Biswas
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
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Effect of both vertical and longitudinal electric field on AlGaN/GaN HEMT 2DEG channel is studied under long pulses with different duty cycles at two separate V
GS
(i.e. at +2 and -2 V). The duty cycles of applied pulses are of 100, 50, 5 and 0.5 %. Separate responses are being observed to confirm different non-ideal reliability issues like scatterings, effects of surface states and trapped electrons. It also raises an optimization scenario between available 2DEG concentration in channel and its various scattering and depletion phenomenon.