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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 8/2018

01.08.2018

Electron states, effective masses and transverse effective charge of InAs quantum dots

verfasst von: H. Bekhouche, D. Rahou, A. Gueddim, M. K. Abdelhafidi, N. Bouarissa

Erschienen in: Optical and Quantum Electronics | Ausgabe 8/2018

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Abstract

The electron energy levels, direct energy band gaps, electron and hole effective masses as well as the transverse effective charge of InAs spherically shaped quantum dots have been studied as a function of the quantum dot radius considered as varying from 1 to 10 nm. The direct energy band-gap as well as the electron and heavy hole effective masses decrease non-linearly with increasing the quantum dot radius. Nevertheless, the transverse effective charge is found to increase with increasing the quantum dot radius. It is concluded that the quantum confinement has a strong influence on all the studied physical quantities for quantum dot radius below 6 nm. The results of the present contribution show that more opportunities can be offered to tailor desired optoelectronic properties surpassing those presented by bulk InAs materials.
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Metadaten
Titel
Electron states, effective masses and transverse effective charge of InAs quantum dots
verfasst von
H. Bekhouche
D. Rahou
A. Gueddim
M. K. Abdelhafidi
N. Bouarissa
Publikationsdatum
01.08.2018
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 8/2018
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-018-1576-z

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