2006 | OriginalPaper | Buchkapitel
Electronic States in Three Dimensional Quantum Dot/Wetting Layer Structures
verfasst von : Marta Markiewicz, Heinrich Voss
Erschienen in: Computational Science and Its Applications - ICCSA 2006
Verlag: Springer Berlin Heidelberg
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Although self-assembled quantum dots are grown on wetting layers, most simulations exclude the wetting layer. The neglected effects on the electronic structure of a pyramidal InAs quantum dot embedded in a GaAs matrix are investigated based on the effective one electronic band Hamiltonian, the energy and position dependent electron effective mass approximation, and a finite height hard-wall 3D confinement potential. By comparing quantum dots with wetting layers and a dot without a wetting layer, we find that the presence of a wetting layer may effect the electronic structure essentially.