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2010 | OriginalPaper | Buchkapitel

7. Field Emission Properties of ZnO, ZnS, and GaN Nanostructures

verfasst von : Y. Mo, J.J. Schwartz, M.H. Lynch, P.A. Ecton, Arup Neogi, J.M. Perez, Y. Fujita, H.W. Seo, Q.Y. Chen, L.W. Tu, N.J. Ho

Erschienen in: Nanoscale Photonics and Optoelectronics

Verlag: Springer New York

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Abstract

We review the growth and field emission (FE) properties of ZnO, ZnS, and GaN nanostructures. For ZnO nanostructures, we discuss in detail solution-based growth techniques and the effects of residual gas exposure on the FE properties. We present new results showing that O₂ and CO₂ exposures do not have a significant effect on the FE properties of ZnO nanorods, but N₂ exposure significantly degrades them. We also present new results showing that Cs deposition significantly improves the FE properties of GaN nanorods.

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Titel: Field Emission Properties of ZnO, ZnS, and GaN Nanostructures
verfasst von: Y. Mo
J.J. Schwartz
M.H. Lynch
P.A. Ecton
Arup Neogi
J.M. Perez
Y. Fujita
H.W. Seo
Q.Y. Chen
L.W. Tu
N.J. Ho
Verlag: Springer New York
Buch: Nanoscale Photonics and Optoelectronics
Print ISBN: 978-1-4419-7233-0

Electronic ISBN: 978-1-4419-7587-4

Copyright-Jahr: 2010
DOI: https://doi.org/10.1007/978-1-4419-7587-4_7

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