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Erschienen in:
1988 | OriginalPaper | Buchkapitel
High Field Transport in SiO2
verfasst von : D. K. Ferry
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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For a great many years, the transport of electrons in amorphous silicon dioxide has been of interest to the electronics community. This interest stems from the importance of this material as an insulator for microelectronics. Primarily, silicon dioxide has been studied for its structure and conductivity, as well as breakdown strength, due to the high voltages applied across the thin layers found in gate oxides of MOS devices. For VLSI, and the new ULSI, fields in the insulator are expected to be on the order of a few MV/cm, and thus relatively close to electrical breakdown.