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01.10.2011 | Research Paper

Improvement of n-ZnO/p-Si photodiodes by embedding of silver nanoparticles

verfasst von: Zhan-Shuo Hu, Fei-Yi Hung, Shoou-Jinn Chang, Kuan-Jen Chen, Yi-Wei Tseng, Bohr-Ran Huang, Bo-Cheng Lin, Wei-Yang Chou, Jay Chang

Erschienen in: Journal of Nanoparticle Research | Ausgabe 10/2011

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Abstract

The photo-current of n-ZnO/p-Si heterojunction photodiodes was improved by embedding Ag nanoparticles in the interface (ZnO/nano-P_Ag/p-Si), and the ratio between photo- and dark-current increased by about three orders more than that of a n-ZnO/p-Si specimen. The improvement in the photo-current resulted from the light scattering of embedded Ag nanoparticles. The I–V curve of n-ZnO/p-Si degraded after thermal treatment (A-ZnO/p-Si) because the silicon robbed the oxygen from ZnO to form amorphous silicon dioxide and left an oxygen vacancy. Notably, the properties of ZnO/nano-P_Ag/p-Si were better in the time-dependent photoresponse under 10 V bias. Ag nanoparticles (15–20 nm) scattered the UV light randomly and increased the probability for the absorption of ZnO to enhance the properties of the photodiode.

Vorheriger Artikel Mechanism of local stress release in armchair single-wall zinc oxide nanotube under tensile loading

Nächster Artikel Comprehensive studies on the interactions between chitosan nanoparticles and some live cells

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Titel: Improvement of n-ZnO/p-Si photodiodes by embedding of silver nanoparticles
verfasst von: Zhan-Shuo Hu
Fei-Yi Hung
Shoou-Jinn Chang
Kuan-Jen Chen
Yi-Wei Tseng
Bohr-Ran Huang
Bo-Cheng Lin
Wei-Yang Chou
Jay Chang
Publikationsdatum: 01.10.2011
Verlag: Springer Netherlands
Erschienen in: Journal of Nanoparticle Research / Ausgabe 10/2011
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI: https://doi.org/10.1007/s11051-011-0446-4

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