Influence of Electromagnetic Radiation of Different Quantum Energy on Dielectric Properties of Composites Based on Crystals CdZnTe and ZnSe

The features of changes in the real and imaginary parts of the complex permittivity of the samples with CdZnTe crystallites in the frequency range 10–10³ Hz of the electric field in the absence of exposure to electromagnetic radiation are obtained. It has been shown that composites without these crystals have a higher diffuse reflection coefficient. Under the influence of non-monochromatic light, an increase in the changes in the complex permittivity of the samples with increasing frequency of the measuring field was detected. Moreover, the changes are larger for the samples with the largest crystallite size. The low inertia of changes in the dielectric parameters of the samples under the influence of non-monochromatic illumination is established. Samples with ZnSe (Al) crystallites are characterized by significant changes in the complex permittivity under the influence of non-monochromatic illumination in the frequency range 10³–10⁴ Hz. Negative changes of this parameter are especially unusual. The peculiarities of the spectral dependences of the constituents \( \Delta\upvarepsilon_{\text{ef}}^{'} \) and \( \Delta\upvarepsilon_{\text{ef}}^{''} \) complex permittivity of the structures, measured at a light intensity of 10 mW/cm², have been established. The changes in the magnitudes of the increments of the real and imaginary components of the complex permittivity under the action of X-Ray radiation with a dose rate of 200 mR/h at different frequencies of the electric field are investigated and their characteristic features are determined. An analysis of the results from the point of view of non-equilibrium electronic processes in semiconductors is presented.