Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Bücher
Zeitschriften
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
SLX-Digitalkonferenz: Zukunftswerkstatt 2024

Mehr Umsatz mit Top-Kontakten

Am 7. Mai erfahren Sie, wie Vertriebsteams Leadgenerierung, Leadnurturing und Leadstrategien effizient steuern können.
Erweiterte Suche
Anmelden
nach oben
Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 1/2016

01.01.2016

Investigation of the Purcell effect in GaN-based vertical LED structures using FDTD simulation

verfasst von: Han-Youl Ryu

Erschienen in: Optical and Quantum Electronics | Ausgabe 1/2016

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

The spontaneous emission (SE) rate in GaN-based vertical light-emitting diode (LED) structures can be modified significantly depending on the local density of states near the high-reflectance mirror. In this study, this Purcell effect in vertical LED structures is investigated numerically using finite-difference time-domain simulation. The Purcell factor of vertical LED structures is found to vary periodically with the p-GaN thickness, while it is almost independent of the n-GaN thickness, indicating strong influence of the p-type electrode reflector on the SE modification. The peak of the Purcell factor is obtained to be as high as 1.5 at a properly chosen p-GaN thickness, which leads to substantial increase in the internal quantum efficiency (IQE) of LEDs. Since the influence of the Purcell factor on IQE becomes more conspicuous as IQE decreases, the Purcell effect of vertical LED structures is expected to mitigate the green-gap and the efficiency droop problems of current LED technologies.
Vorheriger Artikel Room-temperature nanoimprint lithography to fabricate TiO2 subwavelength phase retarder
Nächster Artikel Investigation of whether uniform carrier distribution in quantum wells can lead to higher performance in InGaN light-emitting diodes

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Jetzt informieren
Literatur
Amos, R.M., Barnes, W.L.: Modification of the spontaneous emission rate of Eu3+ ions close to a thin metal mirror. Phys. Rev. B 55, 7249–7254 (1997)CrossRefADS
Boroditsky, M., Vrijen, R., Krauss, T.F., Coccioli, R., Bhat, R., Yablonovitch, E.: Spontaneous emission extraction and Purcell enhancement from thin-film 2-D photonic crystals. J. Lightwave Technol. 17, 2096–2112 (1999)CrossRefADS
Chen, C.Y., Yeh, D.M., Lu, Y.C., Yang, C.C.: Dependence of resonant coupling between surface plasmons and an InGaN quantum well on metallic structure. Appl. Phys. Lett. 89, 203113-1–203113-3 (2006)ADS
Chen, G., Craven, M., Kim, A., Munkholm, A., Watanabe, S., Camras, M., Götz, W., Steranka, F.: Performance of high-power III-nitride light emitting diodes. Phys. Status Solidi A 205, 1086–1092 (2008)CrossRefADS
Chu, C.F., Cheng, C.C., Liu, W.H., Chu, J.Y., Fan, F.H., Cheng, H.C., Doan, T., Tran, C.A.: High brightness GaN vertical light-emitting diodes on metal alloy for general lighting application. Proc. IEEE 98, 1197–1207 (2010)CrossRef
Crawford, M.H.: LEDs for solid-state lighting: performance challenges and recent advances. IEEE J. Sel. Top. Quantum Electron. 15, 1028–1040 (2009)CrossRef
Drabe, K.E., Cnossen, G., Wiersma, D.A.: Localization of spontaneous emission in front of a mirror. Opt. Commun. 73, 91–95 (1989)CrossRefADS
Hwang, J.K., Ryu, H.Y., Lee, Y.H.: Spontaneous emission rate of an electric dipole in a general microcavity. Phys. Rev. B 60, 4688–4695 (1999)CrossRefADS
Koenderink, A.F., Kafesaki, M., Soukoulis, C.M., Sandoghdar, V.: Spontaneous emission rates of dipoles in photonic crystal membranes. J. Opt. Soc. Am. B 23, 1196–1206 (2006)CrossRefADS
Laubsch, A., Sabathil, M., Baur, J., Peter, M., Hahn, B.: High-power and high-efficiency InGaN-based light emitters. IEEE Trans. Electron Devices 57, 79–87 (2010)CrossRefADS
Laws, G.M., Larkins, E.C., Harrison, I., Molloy, C., Somerford, D.: Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys. J. Appl. Phys. 89, 1108–1115 (2001)CrossRefADS
Mazaheri, A., Fallah, H.R., Zarbakhsh, J.: Application of LDOS and multipole expansion technique in optimization of photonic crystal designs. Opt. Quantum Electron. 45, 67–77 (2013)CrossRef
Morawitz, H.: Self-coupling of a two-level system by a mirror. Phys. Rev. 187, 1792–1796 (1969)CrossRefADS
Narukawa, Y., Ichikawa, M., Sanga, D., Sano, M., Mukai, T.: White light emitting diodes with super-high luminous efficacy. J. Phys. D Appl. Phys. 43, 354002-1–354002-6 (2010)CrossRef
Okamoto, K., Niki, I., Shvartser, A., Narukawa, Y., Mukai, T., Scherer, A.: Surface-plasmon-enhanced light emitters based on InGaN quantum wells. Nat. Mater. 3, 601–605 (2004)CrossRefADS
Peter, M., Laubsch, A., Bergbauer, W., Meyer, T., Sabathil, M., Baur, J., Hahn, B.: New developments in green LEDs. Phys. Status Solidi A 206, 1125–1129 (2009)CrossRefADS
Piprek, J.: Efficiency droop in nitride-based light-emitting diodes. Phys. Status Solidi A 207, 2217–2225 (2010)CrossRefADS
Purcell, E.M.: Spontaneous emission probabilities at radio frequencies. Phys. Rev. 69, 681–681 (1946)CrossRef
Ryu, H.Y., Notomi, M.: Enhancement of spontaneous emission from the resonant modes of a photonic crystal slab single-defect cavity. Opt. Lett. 28, 2390–2392 (2003)CrossRefADS
Jeong, T., Baek, J.H., Jeong, K.C., Ha, J.S., Ryu, H.Y.: Investigation of light extraction efficiency and internal quantum efficiency in high-power vertical blue light-emitting diode with 3.3 W output power. Jpn. J. Appl. Phys. 52, 10MA09-1–10MA09-4 (2013)CrossRef
Schubert, E.F., Kim, J.K.: Solid-state light sources getting smart. Science 308, 1274–1278 (2005)CrossRefADS
Sun, G., Khurgin, J.B., Soref, R.A.: Practical enhancement of spontaneous emission using surface plasmons. Appl. Phys. Lett. 90, 111107-1–111107-3 (2007)ADS
Taflove, A.: Computational Electrodynamics: The Finite-Difference Time-Domain Method. Artech House Inc., Norwood (1995)MATH
Verzellesi, G., Saguatti, D., Meneghini, M., Bertazzi, F., Goano, M., Meneghesso, G., Zanoni, E.: Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies. J. Appl. Phys. 114, 071101-1–071101-14 (2013)CrossRefADS
Vučković, J., Lončar, M., Scherer, A.: Surface plasmon enhanced light-emitting diode. IEEE J. Quantum Electron. 36, 1131–1144 (2000)CrossRefADS
Xu, Y., Vučković, J., Lee, R.K., Painter, O.J., Scherer, A., Yariv, A.: Finite-difference time-domain calculation of spontaneous emission lifetime in a microcavity. J. Opt. Soc. Am. B 16, 465–474 (1999)CrossRefADS
Yang, W., He, Y., Hu, X.: Practicable alleviation of efficiency droop effect using surface plasmon coupling in GaN-based light emitting diodes. Appl. Phys. Lett. 102, 241111-1–241111-5 (2013)ADS
Metadaten
Titel
Investigation of the Purcell effect in GaN-based vertical LED structures using FDTD simulation
verfasst von
Han-Youl Ryu
Publikationsdatum
01.01.2016
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 1/2016
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-015-0276-1

Weitere Artikel der Ausgabe 1/2016

Optical and Quantum Electronics 1/2016 Zur Ausgabe

OriginalPaper

Narrow stop band optical filter using one-dimensional regular Fibonacci/Rudin Shapiro photonic quasicrystals

OriginalPaper

Synthesis of diamond-like carbon films by electro-deposition technique for solar cell applications

OriginalPaper

All-optical and digital non-linear compensation algorithms in flex-coherent grouped and un-grouped contiguous spectrum based networks

OriginalPaper

Comparative analysis of XPM-induced crosstalk in SCM–WDM transmission links

OriginalPaper

Lax pair, rogue-wave and soliton solutions for a variable-coefficient generalized nonlinear Schrödinger equation in an optical fiber, fluid or plasma

OriginalPaper

Fabrication of metal nano-wires by laser interference lithography using a tri-layer resist process

Neuer Inhalt

    Bildnachweise