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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 8/2018

01.08.2018

Ion assisted deposition of magnesium fluoride films at low temperature

verfasst von: R. Shakoury, Ronald R. Willey

Erschienen in: Optical and Quantum Electronics | Ausgabe 8/2018

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Abstract

Various papers from 1987 to the present have reported efforts to deposit MgF2 at low temperatures with less than satisfactory results. Process parameters have been developed here for magnesium fluoride coatings which can be deposited without process heat and meet the same performance as is usually achieved in a 300 °C process. Such films on BK7 glass have an index of refraction in excess of 1.39 at 550 nm without significant absorption or scattering and pass the usual mil-spec eraser-rub hardness/abrasion test. Design of Experiments Methodology has been used to find the ion assisted deposition parameters suitable for the Veeco Mark-II ion source using nitrogen as the working gas in a chamber with a 2500 L/s pumping speed. The topology of the surface has been investigated with AFM measurement. Also, the images of some samples have been taken by microscope. AFM and microscope images are analyzed. The scattering of samples are attributed more to cracks on the surfaces than roughness.
Vorheriger Artikel 40 Gbps–80 GHz PSK-MDM based Ro-FSO transmission system
Nächster Artikel Large lateral shift in complex dielectric multilayers with nearly parity–time symmetry

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Metadaten
Titel
Ion assisted deposition of magnesium fluoride films at low temperature
verfasst von
R. Shakoury
Ronald R. Willey
Publikationsdatum
01.08.2018
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 8/2018
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-018-1594-x

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