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2020 | OriginalPaper | Buchkapitel

Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs

verfasst von : Toufik Sadi, Oves Badami, Vihar Georgiev, Asen Asenov

Erschienen in: Large-Scale Scientific Computing

Verlag: Springer International Publishing

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Abstract

By using a stochastic simulation model based on the kinetic Monte Carlo approach, we study the physics, operation and reliability of resistive random-access memory (RRAM) devices based on oxides, including silicon-rich silica (SiO\(_x\)) and hafnium oxide – HfO\(_x\) – a widely used transition metal oxide. The interest in RRAM technology has been increasing steadily in the last ten years, as it is widely viewed as the next generation of non-volatile memory devices. The simulation procedure describes self-consistently electronic charge and thermal transport effects in the three-dimensional (3D) space, allowing the study of the dynamics of conductive filaments responsible for switching. We focus on the study of the reliability of these devices, by specifically looking into how oxygen deficiency in the system affects the switching efficiency.

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Titel: Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs
verfasst von: Toufik Sadi
Oves Badami
Vihar Georgiev
Asen Asenov
Verlag: Springer International Publishing
Buch: Large-Scale Scientific Computing
Print ISBN: 978-3-030-41031-5

Electronic ISBN: 978-3-030-41032-2

Copyright-Jahr: 2020
DOI: https://doi.org/10.1007/978-3-030-41032-2_49

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