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Erschienen in:
Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics Kapitel lesen Erstes Kapitel lesen

2018 | OriginalPaper | Buchkapitel

2. Lateral GaN HEMT Structures

verfasst von : Chang Soo Suh

Erschienen in: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Verlag: Springer International Publishing

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Abstract

This chapter describes the basic GaN-based HEMT device, including the polarization effects and surface states responsible for the formation of the 2DEG in AlGaN/GaN heterostructures. GaN HEMT device structure innovations for increasing the channel mobility, reducing the current collapse phenomena, achieving high voltage breakdown, and enabling normally off operation are presented.

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Vorheriges Kapitel Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics
Nächstes Kapitel Vertical GaN Transistors for Power Electronics
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Metadaten
Titel
Lateral GaN HEMT Structures
verfasst von
Chang Soo Suh
Copyright-Jahr
2018
Buch
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Print ISBN: 978-3-319-77993-5

Electronic ISBN: 978-3-319-77994-2

Copyright-Jahr: 2018

DOI
https://doi.org/10.1007/978-3-319-77994-2_2

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