2006 | OriginalPaper | Buchkapitel
CAN LEIS SPECTRA CONTAIN INFORMATION ON SURFACE ELECTRONIC STRUCTURE OF HIGH-K DIELECTRICS?
verfasst von : Y. LEBEDINSKII, A. ZENKEVICH, M. PUSHKIN, N. BARANTSEV, V. TROYAN, V. NEVOLIN
Erschienen in: Defects in High-k Gate Dielectric Stacks
Verlag: Springer Netherlands
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While investigating the surface composition of thin layers containing Hf with low energy ion spectroscopy (LEIS) utilizing He
+
ions with energy
E
0
=300÷800 eV, the fine structure of Hf line was observed. Hf spectrum consists of several narrow lines on top of a broad asymmetric peak. The number of lines and their separation does not depend on He
+
incident energy, but rather on the chemical composition of the surface layer: spectrum of metallic Hf is remarkably different from that of HfO
2
, and, on the contrary, is very similar to HfSi
x
. The observed effect is explained in terms of single electronic excitations due to promotion of Hf-He
+
molecular orbitals during impact which leads to the inelastic energy loss of He
+
. Since LEIS is sensitive to the utmost surface layer, the observed effect can be potentially utilized to probe the surface electronic structure of compounds containing Hf.