2003 | OriginalPaper | Buchkapitel
SIMS — Secondary Ion Mass Spectrometry
verfasst von : R. J. MacDonald, B. V. King
Erschienen in: Surface Analysis Methods in Materials Science
Verlag: Springer Berlin Heidelberg
Enthalten in: Professional Book Archive
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Secondary ion mass spectroscopy (SIMS) is an ion beam analysis technique useful for characterising the top few micrometres of samples. Primary ions of energy 0.5–20 keV, commonly O2+, Cs+, Ar+ but also ions such as Ga+, Xe+, O-, C m m + and SF6+ are used to erode the sample surface and the secondary elemental or cluster ions formed from the target atoms by the impact are extracted from the surface by an electric field and then energy and mass analyzed. The ions are then detected by a Faraday cup or electron multiplier and the resulting secondary ion distribution displayed as a function of mass, surface location or depth into the sample (Fig. 5.1).