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Journal of Materials Science
Erschienen in: Journal of Materials Science 8/2015

01.04.2015 | Original Paper

Microstructure and properties of epitaxial Sr2FeMoO6 films containing SrMoO4 precipitates

verfasst von: Hakan Deniz, Daniele Preziosi, Marin Alexe, Dietrich Hesse, Christian Eisenschmidt, Georg Schmidt, Lucian Pintilie

Erschienen in: Journal of Materials Science | Ausgabe 8/2015

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Abstract

Thin films of Sr2FeMoO6 (SFMO) were grown by pulsed laser deposition in non-optimized argon ambient pressures. The films were found to contain a high number of precipitates of foreign phases. The nature and microstructure of these phases were investigated in detail by high-resolution scanning transmission electron microscopy (STEM) and X-ray diffractometry (XRD). We found out that the dominant foreign phase embedded in the SFMO film matrix was SrMoO4 (SMO). Through STEM and XRD analysis, we determined that the SMO phase grows epitaxially with respect to the surrounding SFMO matrix and has a fairly good crystallinity. Although the SFMO films include many foreign precipitates, they still exhibit good conducting properties and moderate magnetization values. Tuning the growth of the SMO phase on top of SFMO films to obtain a natural tunnel barrier might pave the way for future applications of SFMO in spintronic devices.
Vorheriger Artikel Enhanced ductility and tensile properties of hybrid montmorillonite/cellulose nanowhiskers reinforced polylactic acid nanocomposites
Nächster Artikel Tunable morphology from 2D to 3D in the formation of hierarchical architectures from a self-assembling dipeptide: thermal-induced morphological transition to 1D nanostructures

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Metadaten
Titel
Microstructure and properties of epitaxial Sr2FeMoO6 films containing SrMoO4 precipitates
verfasst von
Hakan Deniz
Daniele Preziosi
Marin Alexe
Dietrich Hesse
Christian Eisenschmidt
Georg Schmidt
Lucian Pintilie
Publikationsdatum
01.04.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 8/2015
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-015-8874-7

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