Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Bücher
Zeitschriften
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
SLX-Digitalkonferenz: Zukunftswerkstatt 2024

Mehr Umsatz mit Top-Kontakten

Am 7. Mai erfahren Sie, wie Vertriebsteams Leadgenerierung, Leadnurturing und Leadstrategien effizient steuern können.
Erweiterte Suche
Anmelden
nach oben
Journal of Sol-Gel Science and Technology
Erschienen in: Journal of Sol-Gel Science and Technology 3/2015

01.09.2015 | Original Paper

Preparation and light-controlled resistive switching memory behavior of CuCr2O4

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 3/2015

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

In this work, CuCr2O4 nanoparticles were successfully prepared by an improved hydrothermal process, and a resistive switching memory behavior with Ag/CuCr2O4/fluorine-doped tin oxide structure is demonstrated. Specially, the resistive switching memory characteristics can be controlled by white-light illumination. The device can maintain superior stability over 100 cycles with an OFF/ON-state resistance ratio of about 103 at room temperature. This study is useful for exploring the promising light-controlled resistive switching memory device in the development of resistive switching random-access memory.

Graphical Abstract

We demonstrate a resistive switching device based on Ag/CuCr2O4/FTO structure, and the device shows light-controlled resistive switching memory characteristics.
Vorheriger Artikel Influence of sol–gel conditions on the final structure of silica-based precursors
Nächster Artikel Sol–gel synthesis and characterization of the delafossite CuAlO2

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren
Literatur
1.
Waser R, Aono M (2007) Nanoionics-based resistive switching memories. Nat Mater 6:833–840CrossRef
2.
Yang JJ, Pickett MD, Li XM, Ohlberg DAA, Stewart DR, Williams RS (2008) Memristive switching mechanism for metal/oxide/metal nanodevices. Nat Nanotechnol 3:429–433CrossRef
3.
Chanthbouala A, Garcia V, Cherifi RO, Bouzehouane K, Fusil S, Moya X, Xavier S, Yamada H, Deranlot C, Mathur ND, Bibes M, Barthélémy A, Grollier J (2012) A ferroelectric memristor. Nat Mater 11:860–864CrossRef
4.
Xu XY, Yin ZY, Xu CX, Dai J, Hu JG (2014) Resistive switching memories in MoS2 nanosphere assemblies. Appl Phys Lett 104:033504CrossRef
5.
Sun B, Li QL, Liu YH, Chen P (2015) Resistive switching of multiferroic BiCoO3 nanoflowers. Funct Mater Lett 8:1550001CrossRef
6.
Sun B, Li CM (2014) Superior resistive switching behaviors of FeWO4 single-crystalline nanowires array. Chem Phys Lett 604:127–130CrossRef
7.
Nagashima K, Yanagida T, Oka K, Taniguchi M, Kawai T, Kim JS, Park BH (2010) Resistive switching multistate nonvolatile memory effects in a single cobalt oxide nanowire. Nano Lett 10:1359–1363CrossRef
8.
Qi J, Olmedo M, Ren J, Zhan N, Zhao J, Zheng JG, Liu JL (2012) Resistive switching in single epitaxial ZnO nanoislands. ACS Nano 6:1051–1058CrossRef
9.
He L, Liao ZM, Wu HC, Tian XX, Xu DS, Cross GLW, Duesberg GS, Shvets IV, Yu DP (2011) Memory and threshold resistance switching in Ni/NiO core–shell nanowires. Nano Lett 11:4601–4606CrossRef
10.
Sun B, Li HW, Wei LJ, Chen P (2014) Hydrothermal synthesis and resistive switching behaviour of WO3/CoWO4 core–shell nanowires. CrystEngComm 16:9891–9895CrossRef
11.
Sun B, Liu YH, Zhao WX, Wu JG, Chen P (2015) Hydrothermal preparation and white-light-controlled resistive switching behavior of BaWO4 nanospheres. Nano Micro Lett 7:80–85CrossRef
12.
Szot K, Speier W, Bihlmayer G, Waser R (2006) Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nat Mater 5:312–320CrossRef
13.
Asamitsu A, Tomioka Y, Kuwahara H, Tokura Y (1997) Current switching of resistive states in magnetoresistive manganites. Nature 388:50–52CrossRef
14.
Kim DS, Kim YH, Lee CE, Kim YT (2006) Colossal electroresistance mechanism in a Au/Pr0.7Ca0.3MnO3/Pt sandwich structure: evidence for a Mott transition. Phys Rev B 74:174430CrossRef
15.
Wuttig M (2005) Phase-change materials—towards a universal memory? Nat Mater 4:265–266CrossRef
16.
Li Y, Zhong YP, Xu L, Zhang JJ, Xu XH, Sun HJ, Miao XS (2013) Ultrafast synaptic events in a chalcogenide memristor. Sci Rep 3:1619
17.
Liao ZM, Hou C, Zhao Q, Wang DS, Li YD, Yu DP (2009) Resistive switching and metallic-filament formation in Ag2S nanowire transistors. Small 5:2377–2381CrossRef
18.
Jo SH, Kim KH, Lu W (2009) High-density crossbar arrays based on a Si memristive system. Nano Lett 9:870–874CrossRef
19.
Lee T, Chen Y (2012) Organic resistive nonvolatile memory materials. MRS Bull 37:144–149CrossRef
20.
Liu ZM, Yasseri AA, Lindsey JS, Bocian DF (2003) Molecular memories that survive silicon device processing and real-world operation. Science 302:1543–1545CrossRef
21.
Yan F, Xing GZ, Li L (2014) Low temperature dependent ferroelectric resistive switching in epitaxial BiFeO3 films. Appl Phys Lett 104:132904CrossRef
22.
Lin YB, Yan ZB, Lu XB, Lu ZX, Zeng M, Chen Y, Gao XS, Wan JG, Dai JY, Liu JM (2014) Temperature-dependent and polarization-tuned resistive switching in Au/BiFeO3/SrRuO3 junctions. Appl Phys Lett 104:143503CrossRef
23.
Rozenberg MJ, Inoue IH, Sanchez MJ (2006) Strong electron correlation effects in nonvolatile electronic memory devices. Appl Phys Lett 88:033510CrossRef
24.
Tsymbal EY, Kohlstedt H (2006) Applied physics—tunneling across a ferroelectric. Science 313:181–183CrossRef
25.
Kohlstedt H, Pertsev NA, Contreras JR, Waser R (2005) Theoretical current–voltage characteristics of ferroelectric tunnel junctions. Phys Rev B 72:125341CrossRef
26.
Sun B, Li CM (2015) Light-controlled resistive switching memory of multiferroic BiMnO3 nanowires array. Phys Chem Chem Phys 17:6718–6721CrossRef
27.
Lee D, Seong D, Jo I, Xiang F, Dong R, Oh S, Hwang H (2007) Resistance switching of copper doped MoOx films for nonvolatile memory applications. Appl Phys Lett 90:122104CrossRef
28.
Wang LH, Yang W, Sun QQ, Zhou P, Lu HL, Ding SJ, Zhang DW (2012) The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories. Appl Phys Lett 100:063509CrossRef
29.
Xiao HM, Zhu LP, Liu XM, Fu SY (2007) Anomalous ferromagnetic behavior of CuO nanorods synthesized via hydrothermal method. Solid State Commun 141:431–435CrossRef
30.
Waghulade RB, Patil PP, Pasricha R (2007) Synthesis and LPG sensing properties of nano-sized cadmium oxide. Talanta 72:594–599CrossRef
31.
Valdés-Solís T, Marbán G, Fuertes AB (2006) Nanosized catalysts for the production of hydrogen by methanol steam reforming. Catal Today 116:354–360CrossRef
32.
Duque JGS, Souza EA, Meneses CT, Kubota L (2007) Magnetic properties of NiFe2O4 nanoparticles produced by a new chemical method. Phys B 398:287–290CrossRef
33.
Cui H, Zayat M, Levy D (2005) Sol-gel synthesis of nanoscaled spinels using propylene oxide as a gelation agent. J Sol Gel Sci Technol 35:175–181CrossRef
34.
Kawamoto AM, Pardini LC, Rezende LC (2004) Synthesis of copper chromite catalyst. Aerosp Sci Technol 8:591–598CrossRef
35.
Bajaj R, Sharma M, Bahadur D (2013) Visible light-driven novel nanocomposite (BiVO4/CuCr2O4) for efficient degradation of organic dye. Dalton Trans 42:6736–6744CrossRef
36.
Yan J, Zhang L, Yang H, Tang Y, Lu Z, Guo S, Dai Y, Han Y, Yao M (2009) CuCr2O4/TiO2 heterojunction for photocatalytic H-2 evolution under simulated sunlight irradiation. Sol Energy 83:1534–1539CrossRef
37.
Boumaza S, Bouarab R, Trari M, Bouguelia A (2009) Hydrogen photo-evolution over the spinel CuCr2O4. Energy Convers Manage 50:62–68CrossRef
38.
Pan L, Li L, Bao X, Chen Y (2012) Highly photocatalytic activity for p-nitrophenol degradation with spinel-structured CuCr2O4. Micro Nano Lett 7:415–418CrossRef
39.
Acharyya SS, Ghosh S, Tiwari R, Sarkar B, Singha RK, Pendem C, Sasaki T, Bal R (2014) Preparation of the CuCr2O4 spinel nanoparticles catalyst for selective oxidation of toluene to benzaldehyde. Green Chem 16:2500–2508CrossRef
40.
Zhang P, Shi Y, Chi M, Park JN, Stucky GD, McFarland EW, Gao L (2013) Mesoporous delafossite CuCrO2 and spinel CuCr2O4: synthesis and catalysis. Nanotechnology 24:345704CrossRef
41.
Dong H, Zhang X, Zhao D, Niu Z, Zeng Q, Li J, Cai L, Wang Y, Zhou W, Gaob M, Xie S (2012) High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires. Nanoscale 4:2571–2574CrossRef
42.
Yang Y, Zhang X, Gao M, Zeng F, Zhou W, Xie S, Pan F (2011) Nonvolatile resistive switching in single crystalline ZnO nanowires. Nanoscale 3:1917–1921CrossRef
43.
Ungureanu M, Zazpe R, Golmar F, Stoliar P, Llopis R, Casanova F, Hueso LE (2012) A light-controlled resistive switching memory. Adv Mater 24:2496–2500CrossRef
44.
Choi DH, Lee D, Sim H, Chang M, Hwang HS (2006) Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications. Appl Phys Lett 88:082904CrossRef
45.
Park J, Lee S, Lee J, Yong K (2013) A light incident angle switchable ZnO nanorod memristor: reversible switching behavior between two non-volatile memory devices. Adv Mater 25:6423–6429CrossRef
46.
Park J, Lee S, Yong K (2012) Photo-stimulated resistive switching of ZnO nanorods. Nanotechnology 23:385707CrossRef
47.
Sun B, Liu YH, Zhao WX, Chen P (2015) Magnetic-field and white-light controlled resistive switching behaviors in Ag/[BiFeO3/γ-Fe2O3]/FTO device. RSC Adv 5:13513–13518CrossRef
48.
Deng XL, Hong S, Hwang I, Kim JS, Jeon JH, Park YC, Lee J, Kang SO, Kawai T, Park BH (2012) Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics. Nanoscale 4:2029–2033CrossRef
49.
Chen XG, Fu JB, Liu SQ, Yang YB, Wang CS, Du HL, Xiong GC, Lian GJ, Lian GJ, Yang JB (2012) Trap-assisted tunneling resistance switching effect in CeO2/La-0.7(Sr0.1Ca0.9)0.3MnO3 heterostructure. Appl Phys Lett 101:153509CrossRef
50.
Chen XG, Ma XB, Yang YB, Chen LP, Xiong GC, Lian GJ, Yang YC, Yang JB (2011) Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3. Appl Phys Lett 98:122102CrossRef
51.
Rubi D, Gomez-Marlasca F, Bonville P, Colson D, Levy P (2012) Resistive switching in ceramic multiferroic Bi0.9Ca0.1FeO3. Phys B 407:3144–3146CrossRef
52.
Sawa A, Fujii T, Kawasaki M, Tokura Y (2004) Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface. Appl Phys Lett 85:4073–4075CrossRef
53.
Zazpe R, Ungureanu M, Golmar F, Stoliar P, Llopis R, Casanova F, Pickup DF, Rogerofh C, Hueso LE (2014) Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices. J Mater Chem C 2:3204–3211CrossRef
54.
Lin CY, Lee DY, Wang SY, Lin CC, Tseng TY (2008) Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices. Surf Coat Technol 203:628–631CrossRef
Metadaten
Titel
Preparation and light-controlled resistive switching memory behavior of CuCr2O4
Publikationsdatum
01.09.2015
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 3/2015
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-015-3736-y

Weitere Artikel der Ausgabe 3/2015

Journal of Sol-Gel Science and Technology 3/2015 Zur Ausgabe

Original Paper

Methylene blue adsorption from aqueous solutions using undoped and silver-doped nanotubes of anatase-titania synthesized via modified hydrothermal method

Original Paper

Ultralow-fluorine sol–gel deposition of thick YBCO multilayer films

Original Paper

A fast green synthesis of Ag nanoparticles in carboxymethyl cellulose (CMC) through UV irradiation technique for antibacterial applications

Original Paper

In situ reduction and stabilization of Ag NPs onto magnetic composites for rapid hydrogenation catalysis

Original Paper

Preparation, properties, and structure of polysiloxanes by acid-catalyzed controlled hydrolytic co-polycondensation of polymethyl(methoxy)siloxane and polymethoxysiloxane

Original Paper

Applications of inorganic–organic mesoporous materials constructed by self-assembly processes for removal of benzo[k]fluoranthene and benzo[b]fluoranthene

Premium Partner

    Marktübersichten

    Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen. 

    Zur Marktübersicht
    Bildnachweise