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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 9/2016

01.09.2016

Behavior of NiO thin films sprayed at different annealing time

verfasst von: Z. El Khalidi, S. Fadili, B. Hartiti, A. Lfakir, P. Thevenin, M. Siadat

Erschienen in: Optical and Quantum Electronics | Ausgabe 9/2016

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Abstract

Nickel oxide thin films were prepared by spray pyrolysis, using nickel chloride as precursor at the concentration of 0.05 M, deposited on ordinary glass substrates. The conditions of preparation were fixed except the annealing time, which is described through optical and electrical characterizations. The films exhibit a cubic structure, with a preferential orientation along (111) revealed by X-ray diffraction (XRD). The optical data measured by Lambda 900 UV/VIS/NIR spectrometer showing a transmission below 60 %. The refractive index n \((\lambda )\), extinction coefficient (k) and dielectric constants are calculated in the range of (300 and 1000 nm), besides Urbach and the gap energies. The electrical characterization using 4-point probe indicated that the sample with the highest annealing time is less resistive.
Vorheriger Artikel Influence of doped Alq3 layer on performance of MEH-PPV, MDMO-PPV, and P3HT polymer light-emitting diodes
Nächster Artikel A two bit optical counter using integrated 2D square lattice photonic crystals

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Metadaten
Titel
Behavior of NiO thin films sprayed at different annealing time
verfasst von
Z. El Khalidi
S. Fadili
B. Hartiti
A. Lfakir
P. Thevenin
M. Siadat
Publikationsdatum
01.09.2016
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 9/2016
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-016-0694-8

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