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Tribology Letters
Erschienen in: Tribology Letters 1/2013

01.01.2013 | Original Paper

Material Removal Mechanism of Copper CMP from a Chemical–Mechanical Synergy Perspective

verfasst von: Jing Li, Yuhong Liu, Xinchun Lu, Jianbin Luo, Yuanjing Dai

Erschienen in: Tribology Letters | Ausgabe 1/2013

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Abstract

The material removal in chemical–mechanical planarization/polishing (CMP) of copper involves both chemical and mechanical effects. The roles of chemical corrosion, abrasive wear, and their synergistic effects on the material removal mechanism were studied by electrochemical analysis and nano-scratching method using atom force microscopy, respectively. Combining with the results of CMP experiments, dominant factors (chemistry and mechanics) in slurries within the range of pH 3.0–10.0 were assessed. Consequently, a removal mechanism map of copper CMP depending on pH values was constructed. In the alkaline slurry, the wear–corrosion effect predominated in the material removal at pH 8.0 and 9.0; while the copper removal mechanism changed to corrosion–wear action in the acidic slurry from pH 4.0 to 6.0, and good surface quality was also obtained. The results and the strategies provide thorough understanding of the material removal mechanism and further optimization of the CMP process.
Vorheriger Artikel Detection of Asperity Contact for Precise Gap Determination in Thin-Film Nanorheometry
Nächster Artikel Relating Molecular Structure to Tribological Chemistry: Borate Esters on Copper

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Metadaten
Titel
Material Removal Mechanism of Copper CMP from a Chemical–Mechanical Synergy Perspective
verfasst von
Jing Li
Yuhong Liu
Xinchun Lu
Jianbin Luo
Yuanjing Dai
Publikationsdatum
01.01.2013
Verlag
Springer US
Erschienen in
Tribology Letters / Ausgabe 1/2013
Print ISSN: 1023-8883
Elektronische ISSN: 1573-2711
DOI
https://doi.org/10.1007/s11249-012-0037-2

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