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Journal of Materials Science

Erschienen in:

01.02.2014

Microstructure and properties of Sip/Al–20 wt% Si composite prepared by hot-pressed sintering technology

verfasst von: Jun Liu, Ziyang Xiu, Xue Liang, Qiang Li, Murid Hussain, Jing Qiao, Longtao Jiang

Erschienen in: Journal of Materials Science | Ausgabe 3/2014

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Abstract

In the present work, 50 vol% Sip/Al–20Si composite was prepared by hot-pressed sintering technology. Si particles were uniformly distributed in the Sip/Al–20Si composite, and only the presence of Si and Al phases were detected by XRD analysis. Dislocations, twins, and stacking faults were found in the Si particles. Several Si phases were found to be precipitated between Al matrix and Si particles. Si/Al interface was clean, smooth, and free from interfacial product. HRTEM indicated that the Si/Al interface was well bonded. The average CTE and thermal conductivity (TC) of Sip/Al–20Si composite were 11.7 × 10⁻⁶/°C and 118 W/(m K), respectively. Sip/Al–20Si composite also demonstrated high mechanical properties (bending strength of 386 MPa). Thus, the comprehensive performance (low density and CTE, high TC, and mechanical properties) makes the Sip/Al–20Si composite very attractive for application in electron packaging.

Vorheriger Artikel Low-temperature thermoelectric and magnetic properties of Ca3−x Bi x Co4O9+δ (0 ≤ x ≤ 0.30)

Nächster Artikel Kraft lignin and silica as precursors of advanced composite materials and electroactive blends

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Titel: Microstructure and properties of Sip/Al–20 wt% Si composite prepared by hot-pressed sintering technology
verfasst von: Jun Liu
Ziyang Xiu
Xue Liang
Qiang Li
Murid Hussain
Jing Qiao
Longtao Jiang
Publikationsdatum: 01.02.2014
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 3/2014
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-013-7821-8

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