Microstructure and upconversion luminescence of Yb³⁺ and Ho³⁺ co-doped BST thick films

Ba_0.8Sr_0.2TiO₃ (BST) thick films co-doped with Yb³⁺ and Ho³⁺ were fabricated by the screen printing techniques on alumina substrates. The structure and morphology of the BST thick films were studied by XRD and SEM, respectively. After sintered at 1240 °C for 100 min the BST thick films are polycrystalline with a perovskite structure. The upconversion luminescence properties of the RE-doped BST thick films under 800 nm excitation at room temperature were investigated. The upconversion emission bands centered at 470 and 534 nm corresponding to ⁵F₁ → ⁵I₈ and ⁵F₄ → ⁵I₈ transition, respectively were observed, and the upconversion mechanisms were discussed. The dependence of the upconversion emission intensity upon the Ho³⁺ ions concentration was also examined; the emission intensity reaches a maximum value in the sample with 2 mol% Yb³⁺ and 0.250 mol% Ho³⁺ ions. All the results show that the BST thick films co-doped with Yb³⁺ and Ho³⁺ may have potential use for photoelectric devices.