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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 11/2019

01.11.2019

Miniband formation engineering in GaN/AlN superlattices with constant total effective length

verfasst von: M. Solaimani, M. Izadifard

Erschienen in: Optical and Quantum Electronics | Ausgabe 11/2019

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Abstract

In this work, we study the miniband formation procedure in GaN/AlN constant total effective length superlattices by means of the subband energy calculations. We calculate the transmission coefficients and miniband structures of the systems by means of the transfer matrix and finite difference methods, respectively. The miniband structures obtained by using these methods confirm each other. Here, we observe a nonlinear miniband gap behavior as the number of wells changes. Now, we can tune the width of each miniband and minigap by means of the number of wells and the total effective length of the system. By using the strategy of fixing the total length of the system and optimizing the number of layers inside it, we can find the same miniband widths as the usual superlattice (fixing the well width, not the total system length). However, in the earlier case (our proposal), fabrication of the device may need fewer amounts of the material and may lead to smaller device sizes, because we fixed the total system length.
Vorheriger Artikel Ultra-flat optical frequency comb generation based on amplitude modulator and Gaussian band-stop filter
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Metadaten
Titel
Miniband formation engineering in GaN/AlN superlattices with constant total effective length
verfasst von
M. Solaimani
M. Izadifard
Publikationsdatum
01.11.2019
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 11/2019
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-019-2064-9

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