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Erschienen in:
2011 | OriginalPaper | Buchkapitel
Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations
verfasst von : Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr
Erschienen in: Numerical Methods and Applications
Verlag: Springer Berlin Heidelberg
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A stochastic model of the resistive switching mechanism in bipolar oxide-based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. The RESET process in RRAM simulated with our stochastic model is in good agreement with experimental results.