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Journal of Materials Science

Erschienen in:

08.02.2016 | Original Paper

Multilevel resistance state of Cu/La₂O₃/Pt forming-free switching devices

verfasst von: Pranab Kumar Sarkar, Manoj Prajapat, Arabinda Barman, Snigdha Bhattacharjee, Asim Roy

Erschienen in: Journal of Materials Science | Ausgabe 9/2016

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Abstract

An improved temperature dependent uniformity and reliability is investigated in La₂O₃/Pt-based memory devices with Cu top electrode. The microstructural investigation suggested the formation of polycrystalline La₂O₃ layer with stoichiometric chemical composition confirmed by X-ray photoelectron spectroscopy. Besides showing a forming-free resistive switching (RS) behaviour, the device also exhibited excellent multilevel capability with low switching voltage. A uniformity in the SET/RESET process was observed indicating enhanced switching stability. In addition, endurance with a high ON/OFF ratio of the order 10³ and satisfactory data retention time over 10⁴ s at 85 °C temperature confirmed the reliability of memory cells. Intrinsic tailoring of switching mechanism has been discussed in the framework of electric field-induced creation and annihilation of the reproducible Cu filaments in switching layer. The metallic nature of conducting filament has further been confirmed by temperature-dependent RS characterization.

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Titel: Multilevel resistance state of Cu/La2O3/Pt forming-free switching devices
verfasst von: Pranab Kumar Sarkar
Manoj Prajapat
Arabinda Barman
Snigdha Bhattacharjee
Asim Roy
Publikationsdatum: 08.02.2016
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 9/2016
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-016-9753-6

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