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2020 | OriginalPaper | Buchkapitel

12. Novel Nitride LED Technology

verfasst von : Jinmin Li, Junxi Wang, Xiaoyan Yi, Zhiqiang Liu, Tongbo Wei, Jianchang Yan, Bin Xue

Erschienen in: III-Nitrides Light Emitting Diodes: Technology and Applications

Verlag: Springer Singapore

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Abstract

At present, the light efficiency of the high-power white LED has reached 250 lm/W in the industry. The light efficiency reported in the laboratory has exceeded 300 lm/W. The innovation of LED technology and application of LEDs have far exceeded expectations. However, the luminous efficiency of the traditional planar LED with InGaN/GaN multiple quantum well structure is difficult to rise significantly due to some inherent problems. At the same time, the light efficiency is still far away from the theoretical limit of 400 lm/W. In addition, with the demand of some special applications, some new LED technologies such as nanorod LEDs, quantum dot LEDs, polarized LEDs, etc., have been explored. The exploration of the growth, preparation and application of these new LED structures not only contribute to the research of basic physics but also to solve the bottleneck problem in the development of semiconductor lighting by improving the material and device performance and by approaching the theoretical limit of LED lighting. Thus, it has important research value.

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Vorheriges Kapitel Applications of LEDs

S. Nakamura, The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science 281, 956–961 (1998)

F. Bernardini, V. Fiorentini, D. Vanderbilt, Spontaneous polarization and piezoelectric constants of III-V nitrides. Phys. Rev. B. 56, 10024–10027 (1997)ADS

M.H. Chang, D. Das, P.V. Varde et al., Light emitting diodes reliability review. Microelectron. Reliab. 52, 762–782 (2012)

F. Qian, Y. Li, S. Gradecak et al., Gallium nitride-based nanowire radial heterostructures for nanophotonics. Nano Lett. 4, 1975–1979 (2004)ADS

S.F. Li, A. Waag, GaN based nanorods for solid state lighting. J. Appl. Phys. 111, 071101 (2012)ADS

M.S. Kang, C.H. Lee, J.B. Park et al., Gallium nitride nanostructures for light-emitting diode applications. Nano Energy 1, 391–400 (2012)

J. Bai, Q. Wang, T. Wang, Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes. Phys. Status Solidi A-Appl. Mater. Sci. 209, 477–480 (2012)ADS

G.T. Wang, Q.M. Li, J.J. Wierer, D.D. Koleske, J.J. Figiel, Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs. Phys. Status Solidi A-Appl. Mater. Sci. 211, 748–751 (2014)ADS

W. Bergbauer, M. Strassburg et al., Continuous-flux MOVPE growth of position-controlled N-face GaN nanorods and embedded InGaN quantum wells. Nanotechnology 21, 305201 (2010)

10.

C.H. Lee, Y.J. Kim, Y.J. Hong, S.R. Jeon, S. Bae, B.H. Hong, G.C. Yi, Flexible inorganic nanostructure light-emitting diodes fabricated on graphene films. Adv. Mater. 23, 4614–4619 (2011)

11.

H.W. Lin, Y.J. Lu, H.Y. Chen, H.M. Lee, S. Gwo, InGaN/GaN nanorod array white light-emitting diode. Appl. Phys. Lett. 97, 073101 (2010)ADS

12.

H. Sekiguchi, K. Kishino, A. Kikuchi, Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate. Appl. Phys. Lett. 96, 231104 (2010)ADS

13.

S. Albert, A. Bengoechea-Encabo, X. Kong, M.A. Sanchez-Garcia, E. Calleja, A. Trampert, Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns. Appl. Phys. Lett. 102, 181103 (2013)ADS

14.

Y.J. Hong, C.H. Lee, A. Yoon, M. Kim, H.K. Seong, H.J. Chung, C. Sone, Y.J. Park, G.C. Yi, Visible-color-tunable light-emitting diodes. Adv. Mater. 23, 3284–3288 (2011)

15.

K. Kumakura, K. Nakakoshi, J. Motohisa, T. Fukui, H. Hasegawa, Novel formation method of quantum-dot structures by self-limited selective-area metalorganic vapor-phase epitaxy. Jpn. J. Appl. Phys. Part 1-Reg. Pap. Short Notes Rev. Pap. 34, 4387–4389 (1995)

16.

J. Tulkki, A. Heinamaki, Confinement effect in a quantum-well dot induced by an InP stressor. Phys. Rev. B. 52, 8239–8243 (1995)ADS

17.

S. Raymond, X. Guo, J.L. Merz, S. Fafard, Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy. Phys. Rev. B. 59, 7624–7631 (1999)ADS

18.

R. Heitz, M. Grundmann et al., Multiphonon-relaxation processes in self-organized InAs/GaAs quantum dots. Appl. Phys. Lett. 68, 361–363 (1996)ADS

19.

Y.R. Wu, Y.Y. Lin, H.H. Huang, J. Singh, Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting. J. Appl. Phys. 105, 013117 (2009)ADS

20.

S. Schulz, E.P. O’reilly, Theory of reduced built-in polarization field in nitride-based quantum dots. Phys. Rev. B. 82, 033411 (2010)

21.

I.K. Park, J.Y. Kim, M.K. Kwon, C.Y. Cho, J.H. Lim, S.J. Park, Phosphor-free white light-emitting diode with laterally distributed multiple quantum wells. Appl. Phys. Lett. 92, 091110 (2008)ADS

22.

M. Zhang, P. Bhattacharya, W. Guo, InGaN/GaN self-organized quantum dot green light emitting diodes with reduced efficiency droop. Appl. Phys. Lett. 97, 011103 (2010)ADS

23.

W.B. Lv, L. Wang, J.X. Wang, Z.B. Hao, Y. Luo, InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers. Nanoscale Res. Lett. 7, 617 (2012)ADS

24.

J. Ma, X.L. Ji et al., Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots. Appl. Phys. Lett. 101, 131101 (2012)ADS

25.

S.J. Chua, C.B. Soh, W. Liu, J.H. Teng, S.S. Ang, S.L. Teo, Quantum dots excited InGaN/GaN phosphor-free white LEDs. Phys. Status Solidi C Curr. Top. Solid State Phys. 5, 2189–2191 (2008)ADS

26.

H.S. Chen, C.K. Hsu, H.Y. Hong, InGaN-CdSe-ZnSe quantum dots white LEDs. IEEE Photonics Technol. Lett. 18, 193–195 (2006)ADS

27.

K. Okamoto, Y. Kawakami, High-efficiency InGaN/GaN light emitters based on nanophotonics and plasmonics. IEEE J. Sel. Top. Quantum Electron. 15, 1199–1209 (2009)ADS

28.

K. Okamoto, I. Niki, A. Shvartser et al., Surface-plasmon-enhanced light emitters based on InGaN quantum wells. Nat. Mater. 3, 601–605 (2004)ADS

29.

K. Okamoto, I. Niki, A. Scherer, Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy. Appl. Phys. Lett. 87, 071102 (2005)ADS

30.

P.P. Pompa, L. Martiradonna, A.D. Torre et al., Metal-enhanced fluorescence of colloidal nanocrystals with nanoscale control. Nat. Nanotechnol. 1, 126–130 (2006)ADS

31.

D.M. Yeh, C.F. Huang, C.Y. Chen, Y.C. Lu, C.C. Yang, Localized surface plasmon-induced emission enhancement of a green light-emitting diode. Nanotechnology 19, 345201 (2008)

32.

C.Y. Cho, M.K. Kwon, S.J. Lee et al., Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN. Nanotechnology 21, 205201 (2010)ADS

33.

C.Y. Cho, K.S. Kim, S.J. Le et al., Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO₂ nano-disks embedded in p- GaN. Appl. Phys. Lett. 99, 041107 (2011)ADS

34.

C.H. Lu, C.C. Lan, Y.L. Lai et al., Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array. Adv. Funct. Mater. 21, 4719–4723 (2011)

35.

H.S. Chen, C.F. Chen, Y. Kuo et al., Surface plasmon coupled light-emitting diode with metal protrusions into p-GaN. Appl. Phys. Lett. 102, 41108 (2013)

36.

Z.G. Yu, L.X. Zhao, X.C. Wei et al., Surface plasmon-enhanced nanoporous GaN based green light-emitting diodes with Al₂O₃ passivation layer. Opt. Express 22, A1596–A1603 (2014)

37.

M.F. Schubert, A. Noemaun, S. Chhajed et al., Encapsulation shape with non-rotational symmetry designed for extraction of polarized light from unpolarized sources. Opt. Express 15, 10452–10457 (2007)ADS

38.

M.F. Schubert, S. Chhajed, J.K. Kim et al., Polarization of light emission by 460 nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates. Appl. Phys. Lett. 91, 051117 (2007)ADS

39.

M.F. Schubert, S. Chhajed, J.K. Kim et al., Linearly polarized emission from GaInN light-emitting diodes with polarization-enhancing reflector. Opt. Express 15, 11213–11218 (2007)ADS

40.

O. Sepsi, I. Szanda, P. Koppa, Investigation of polarized light emitting diodes with integrated wire grid polarizer. Opt. Express 18(14), 14547–14552 (2010)ADS

41.

N. Gardner, J. Kim, J. Wierer et al., Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes. Appl. Phys. Lett. 86, 111101 (2005)ADS

42.

S. Brinkley, Y. Lin, A. Chakraborty et al., Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes. Appl. Phys. Lett. 98, 011110 (2011)ADS

43.

M. Kubota, K. Kuniyoshi, T. Taketoshi et al., Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes. Appl. Phys. Lett. 92, 011920 (2008)ADS

44.

E. Matioli, S. Brinkley, K.M. Kelchner et al., Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals. Appl. Phys. Lett. 98, 251112 (2011)ADS

45.

E. Matioli, S. Brinkley, K.M. Kelchner, Y.L. Hu, S. Nakamura, S. DenBaars, J. Speck, C. Weisbuch, Light Sci. Appl. 1, e22 (2012)

46.

H. Masui, H. Yamada, K. Iso et al., Optical polarization characteristics of m-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure. J. Phys. D-Appl. Phys. 41, 225104 (2008)ADS

47.

A. Yamaguchi, Anisotropic optical matrix elements in strained GaN quantum wells on semipolar and nonpolar substrates. Jpn. J. Appl. Phys. Part 2-Lett. Express Lett. 46, L789–L791 (2007)

48.

J. Shakya, K. Knabe, K. Kim et al., Polarization of III-nitride blue and ultraviolet light-emitting diodes. Appl. Phys. Lett. 86, 091107 (2005)ADS

49.

C. Jia, T. Yu, S. Mu et al., Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm. Appl. Phys. Lett. 90, 211112 (2007)ADS

50.

K. Shen, C. Chen, C. Huang et al., Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN/GaN dual-quantum-well structure. Appl. Phys. Lett. 92, 013108 (2008)ADS

51.

K. Shen, C. Liao, Z. Yu et al., Effects of the intermediate SiO₂ layer on polarized output of a light-emitting diode with surface plasmon coupling. J. Appl. Phys. 108, 113101 (2010)ADS

Titel: Novel Nitride LED Technology
verfasst von: Jinmin Li
Junxi Wang
Xiaoyan Yi
Zhiqiang Liu
Tongbo Wei
Jianchang Yan
Bin Xue
Verlag: Springer Singapore
Buch: III-Nitrides Light Emitting Diodes: Technology and Applications
Print ISBN: 978-981-15-7948-6

Electronic ISBN: 978-981-15-7949-3

Copyright-Jahr: 2020
DOI: https://doi.org/10.1007/978-981-15-7949-3_12

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