25. Numerical Investigation of an InGaP/GaAs Heterojunction Solar Cell by AMPS-1D

Photovoltaic conversion is the direct transformation of Photonic solar energy into Continuous electrical energy (DC). The problem is to know how to exploit the materials capable of this process with very profitable conversion efficiency. The materials of columns III–V of the periodic table and their alloys are very attractive because they offer great flexibility in the energy of the band gap while being adapted to their lattice parameters which are provided with better physical, electrical and mechanical properties. In this study, we proposed to simulate numerically by the AMPS 1D interface a model of a nnpp + hetero junction solar cell based on InGaP/GaAs with a BSF highly doped back layer and a front with a large band gap. The optimal configuration of this cell shows an efficiency of 28.817% under the AM1.5G spectrum and one sun.