1988 | OriginalPaper | Buchkapitel
On the Relationship Between Thermal Growth and Thickness Inhomogeneities in Very Thin SiO2 Films
verfasst von : X. Aymerich, J. Suñé, F. Campabadal, Y. Placencia
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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Roughness on the atomic scale at the Si-SiO2 interface caused by thickness inhomogeneities of the oxide film in MOS structures has been found to have strong influence on the electrical characteristics of IC devices when dimensions are scaled down1–4. Thus, there is need for a deeper physical and mathematical understanding of local thickness inhomogeneities in thin oxide layers.