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2017 | OriginalPaper | Buchkapitel

Optimized Rapid Thermal Process for Selective Emitter Solar Cells

verfasst von : Abdelkader Djelloul, Abderrahmane Moussi, Linda Mahiou, Mourad Mebarki, Samir Meziani, Abdelkader Guenda, Kamel Bourai, Abdelkader Noukaz

Erschienen in: 3rd International Congress on Energy Efficiency and Energy Related Materials (ENEFM2015)

Verlag: Springer International Publishing

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Abstract

In this paper we present an experimental approach for the realization of selective emitter by laser doping. Multi-crystalline Silicon wafers with thin layer of silicon nitride (SiNx) are treated by laser after phosphorous diffusion and PSG removal. Rapid thermal annealing temperatures from 700 to 900 °C have been used for screen printed contacts. The surface of the selective emitter before and after annealing has been observed by scanning electron microscopy (SEM). Electrical characteristics show performance amelioration of the cell efficiency.

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Metadaten
Titel
Optimized Rapid Thermal Process for Selective Emitter Solar Cells
verfasst von
Abdelkader Djelloul
Abderrahmane Moussi
Linda Mahiou
Mourad Mebarki
Samir Meziani
Abdelkader Guenda
Kamel Bourai
Abdelkader Noukaz
Copyright-Jahr
2017
DOI
https://doi.org/10.1007/978-3-319-45677-5_29