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Erschienen in:
Market and applications for NAND Flash memories Kapitel lesen Erstes Kapitel lesen

2010 | OriginalPaper | Buchkapitel

19. Radiation effects on NAND Flash memories

verfasst von : M. Bagatin, G. Cellere, S. Gerardin, A. Paccagnella

Erschienen in: Inside NAND Flash Memories

Verlag: Springer Netherlands

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Abstract

Electronic chips operating at sea level are constantly bombarded by a shower of high-energy neutrons, which originate from the interactions of cosmic rays with the outer layers of the atmosphere. The neutron flux changes with altitude, reaching a peak very close to the cruise altitude of airplanes, posing an even more serious threat to avionics. In addition, inevitable radioactive contaminants in the chip materials emit alpha particles, which may reach sensitive device areas and produce errors. Spacecraft and satellite electronics must operate reliably in a much harsher environment, characterized by a significant presence of ionizing radiation, in the form of protons, electrons, and heavy-ions coming from various sources. Ionizing radiation can cause either permanent or temporary damage to electronic chips, generating a plethora of effects, from flipping an SRAM memory bit from 1 to 0 or vice versa, to burning-out a power MOSFET.

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Vorheriges Kapitel Low power 3D-integrated SSD
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Metadaten
Titel
Radiation effects on NAND Flash memories
verfasst von
M. Bagatin
G. Cellere
S. Gerardin
A. Paccagnella
Copyright-Jahr
2010
Verlag
Springer Netherlands
Buch
Inside NAND Flash Memories

Print ISBN: 978-90-481-9430-8

Electronic ISBN: 978-90-481-9431-5

Copyright-Jahr: 2010

DOI
https://doi.org/10.1007/978-90-481-9431-5_19

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