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Optical and Quantum Electronics
Erschienen in: Optical and Quantum Electronics 11/2019

01.11.2019

Role of oxygen concentrations on structural and optical properties of RF magnetron sputtered ZnO thin films

verfasst von: Francis Otieno, Mildred Airo, Theodore Ganetsos, Rudolph M. Erasmus, David G. Billing, Alexander Quandt, Daniel Wamwangi

Erschienen in: Optical and Quantum Electronics | Ausgabe 11/2019

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Abstract

We report an investigation on the effect of oxygen flow rate on the structural and optical properties of zinc oxide thin films prepared by RF magnetron sputtering. The structural measurements were carried using grazing incidence X-ray diffraction, atomic force microscopy and Raman spectroscopy. The role of oxygen partial pressure on the crystallinity, the surface morphology and vibrational modes has been established. The optical properties of the films were investigated using FR-Basic-VIS/NIR fitted with FR-Monitor software for film thickness, refractive index and color determination. The film thickness is observed to increase when oxygen is introduced at 4 sccm but eventual decrease with increase in the flow rate an indication of initial increase in rate of deposition followed by reduction. Elaborate explanations of these trends are provided.
Vorheriger Artikel Slow light enhanced bio sensing properties of silicon sensors
Nächster Artikel Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions

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Literatur
Badre, C., Pauporté, T., Turmine, M., Lincot, D.: A ZnO nanowire array film with stable highly water-repellent properties. Nanotechnology 18, 365705 (2007)CrossRef
Chen, Y., Bagnall, D., Koh, H.-J., Park, K.-T., Hiraga, K., Zhu, Z., Yao, T.: Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: growth and characterization. J. Appl. Phys. 84, 3912–3918 (1998)ADSCrossRef
Chiu, C., Pei, Z., Chang, S., Chang, S., Chang, S.: Effect of oxygen partial pressure on electrical characteristics of amorphous indium gallium zinc oxide thin-film transistors fabricated by thermal annealing. Vacuum 86, 246–249 (2011)ADSCrossRef
Chuang, R.W., Wu, R.-X., Lai, L.-W., Lee, C.-T.: ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique. Appl. Phys. Lett. 91, 231113-1–231113-3 (2007)ADS
Du, Y.-P., Zhang, Y.-W., Sun, L.-D., Yan, C.-H.: Efficient energy transfer in monodisperse Eu-doped ZnO nanocrystals synthesized from metal acetylacetonates in high-boiling solvents. J. Phys. Chem. C 112, 12234–12241 (2008)CrossRef
Hong, R., Qi, H., Huang, J., He, H., Fan, Z., Shao, J.: Influence of oxygen partial pressure on the structure and photoluminescence of direct current reactive magnetron sputtering ZnO thin films. Thin Solid Films 473, 58–62 (2005)ADSCrossRef
Huang, J.: Zinc oxide thin film transistors by radio frequency magnetron sputtering, pp. 7–47 (2014)
Iqbal, A., Zakria, M., Mahmood, A.: Structural and spectroscopic analysis of wurtzite (ZnO)1–x (Sb2O3)x composite semiconductor. Prog. Nat. Sci. Mater. 25, 131–136 (2015)CrossRef
Janotti, A., Van de Walle, C.G.: Fundamentals of zinc oxide as a semiconductor. Rep. Prog. Phys. 72, 126501-1–126501-29 (2009)ADSCrossRef
Jie, J., Morita, A., Shirai, H.: Role of oxygen atoms in the growth of magnetron sputter-deposited ZnO films. J. Appl. Phys. 108, 033521-1–033521-8 (2010)ADSCrossRef
Karpina, V., Lazorenko, V., Lashkarev, C., Dobrowolski, V., Kopylova, L., Baturin, V., Pustovoytov, S., Karpenko, A.J., Eremin, S., Lytvyn, P.: Zinc oxide–analogue of GaN with new perspective possibilities. Cryst. Res. Technol. 39, 980–992 (2004)CrossRef
Kukla, R., Krug, T., Ludwig, R., Wilmes, K.: A highest rate self-sputtering magnetron source. Vacuum 41, 1968–1970 (1990)CrossRef
Kumar, V., Som, S., Kumar, V., Kumar, V., Ntwaeaborwa, O., Coetsee, E., Swart, H.: Tunable and white emission from ZnO: Tb3+ nanophosphors for solid state lighting applications. Chem. Eng. J. 255, 541–552 (2014)CrossRef
Levinson, J., Shepherd, F., Scanlon, P., Westwood, W., Este, G., Rider, M.: Conductivity behavior in polycrystalline semiconductor thin film transistors. J. Appl. Phys. 53, 1193–1202 (1982)ADSCrossRef
Li, C., Wang, D., Li, Z., Li, X., Kawaharamura, T., Furuta, M.: Stoichiometry control of ZnO thin film by adjusting working gas ratio during radio frequency magnetron sputtering. J. Mater. 2013, 1–6 (2013)CrossRef
Look, D.C., Reynolds, D., Hemsky, J.W., Jones, R., Sizelove, J.: Production and annealing of electron irradiation damage in ZnO. Appl. Phys. Lett. 75, 811–813 (1999)ADSCrossRef
Lupan, O., Chow, L., Chai, G., Chernyak, L., Lopatiuk-Tirpak, O., Heinrich, H.: Focused-ion-beam fabrication of ZnO nanorod-based UV photodetector using the in situ lift-out technique. Phys. Stat. Solidi (a) 205, 2673–2678 (2008a)ADSCrossRef
Lupan, O., Shishiyanu, S., Chow, L., Shishiyanu, T.: Nanostructured zinc oxide gas sensors by successive ionic layer adsorption and reaction method and rapid photothermal processing. Thin Solid Films 516, 3338–3345 (2008b)ADSCrossRef
Lupan, O., Chow, L., Chai, G.: A single ZnO tetrapod-based sensor. Sens. Actuat. B Chem. 141, 511–517 (2009a)CrossRef
Lupan, O., Shishiyanu, S., Ursaki, V., Khallaf, H., Chow, L., Shishiyanu, T., Sontea, V., Monaico, E., Railean, S.: Synthesis of nanostructured Al-doped zinc oxide films on Si for solar cells applications. Sol. Energy Mater. Sol. Cells 93, 1417–1422 (2009b)CrossRef
Lupan, O., Pauporté, T., Chow, L., Viana, B., Pellé, F., Ono, L., Cuenya, B.R., Heinrich, H.: Effects of annealing on properties of ZnO thin films prepared by electrochemical deposition in chloride medium. Appl. Surf. Sci. 256, 1895–1907 (2010)ADSCrossRef
Nagata, T., Ashida, A., Fujimura, N., Ito, T.: The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering. J. Appl. Phys. 95, 3923–3927 (2004)ADSCrossRef
Nomura, K., Ohta, H., Ueda, K., Kamiya, T., Hirano, M., Hosono, H.: Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science 300, 1269–1272 (2003)ADSCrossRef
Otieno, F., Airo, M., Erasmus, R.M., Billing, D.G., Quandt, A., Wamwangi, D.: Structural and spectroscopic analysis of ex situ annealed RF sputtered aluminium doped zinc oxide thin films. J. Appl. Phys. 122, 0753031–07530310 (2017)CrossRef
Özgür, Ü., Alivov, Y.I., Liu, C., Teke, A., Reshchikov, M., Doğan, S., Avrutin, V., Cho, S.-J., Morkoc, H.: A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98, 041301-1–041301-11 (2005)ADSCrossRef
Pauporte, T., Rathouský, J.: Electrodeposited mesoporous ZnO thin films as efficient photocatalysts for the degradation of dye pollutants. J. Phys. Chem. C 111, 7639–7644 (2007)CrossRef
Pauporté, T., Lincot, D., Viana, B., Pellé, F.: Toward laser emission of epitaxial nanorod arrays of ZnO grown by electrodeposition. Appl. Phys. Lett. 89, 233112-1–233112-3 (2006)ADSCrossRef
Reynolds, D., Look, D.C., Jogai, B., Litton, C., Cantwell, G., Harsch, W.: Valence-band ordering in ZnO. Phys. Rev. B 60, 2340–2344 (1999)ADSCrossRef
Saravanakumar, K., Gopinathan, C., Mahalakshmi, K., Ganesan, V., Sathe, V., Sanjeeviraja, C.: XPS and Raman studies on (002) oriented nanocrystalline ZnO films showing temperature dependent optical red shift. Adv. Stud. Theor. Phys. 5, 155–170 (2011)
Sultan, Md, Sultana, N.: Analysis of reflectance and transmittance characteristics of optical thin film for various film materials, thicknesses and substrates. J. Electr. Electron. Syst. 4, 1–4 (2015)CrossRef
Szczyrbowski, J., Dietrich, A., Hartig, K.: Bendable silver-based low emissivity coating on glass. Sol. Energy Mater. 19, 43–53 (1989)CrossRef
Thanikaikarasan, S., Mahalingam, T., Sundaram, K., Kathalingam, A., Kim, Y.D., Kim, T.: Growth and characterization of electrosynthesized iron selenide thin films. Vacuum 83, 1066–1072 (2009)ADSCrossRef
Thomas, D.: The exciton spectrum of zinc oxide. J. Phys. Chem. Solids 15, 86–96 (1960)ADSCrossRef
Tominaga, K., Iwamura, S., Fujita, I., Shintani, Y., Tada, O.: Influence of bombardment by energetic atoms on c-axis orientation of ZnO films. Jpn. J. Appl. Phys. 21, 999–1002 (1982)ADSCrossRef
Tzolov, M., Tzenov, N., Dimova-Malinovska, D., Kalitzova, M., Pizzuto, C., Vitali, G., Zollo, G., Ivanov, I.: Modification of the structure of ZnO: Al films by control of the plasma parameters. Thin Solid Films 396, 276–281 (2001)ADSCrossRef
Valliyil Sasi, V., Iqbal, A., Chaik, K., Iacopi, A., Mohd-Yasin, F.: RF sputtering, post-annealing treatment and characterizations of ZnO (002) thin films on 3C-SiC (111)/Si (111) substrates. Micromachines 8(148), 2–9 (2017)
Wang, R., Liu, C., Huang, J.-L., Chen, S.-J., Tseng, Y.-K., Kung, S.-C.: ZnO nanopencils: efficient field emitters. Appl. Phys. Lett. 87, 013110-1–013110-3 (2005)ADSCrossRef
Willander, M., Nur, O., Zhao, Q., Yang, L., Lorenz, M., Cao, B., Pérez, J.Z., Czekalla, C., Zimmermann, G., Grundmann, M.: Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers. Nanotechnology 20, 332001-1–332001-40 (2009)CrossRef
Yoshida, T., Zhang, J., Komatsu, D., Sawatani, S., Minoura, H., Pauporté, T., Lincot, D., Oekermann, T., Schlettwein, D., Tada, H.: Electrodeposition of inorganic/organic hybrid thin films. Adv. Funct. Mater. 19, 17–43 (2009)CrossRef
Youssef, S., Combette, P., Podlecki, J., Asmar, R.A., Foucaran, A.: Structural and optical characterization of ZnO thin films deposited by reactive rf magnetron sputtering. Cryst. Growth Des. 9, 1088–1094 (2008)CrossRef
Zhang, J., He, G., Zhu, L., Liu, M., Pan, S., Zhang, L.: Effect of oxygen partial pressure on the structural and optical properties of ZnO film deposited by reactive sputtering. Appl. Surf. Sci. 253, 9414–9421 (2007)ADSCrossRef
Metadaten
Titel
Role of oxygen concentrations on structural and optical properties of RF magnetron sputtered ZnO thin films
verfasst von
Francis Otieno
Mildred Airo
Theodore Ganetsos
Rudolph M. Erasmus
David G. Billing
Alexander Quandt
Daniel Wamwangi
Publikationsdatum
01.11.2019
Verlag
Springer US
Erschienen in
Optical and Quantum Electronics / Ausgabe 11/2019
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-019-2076-5

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