Skip to main content
Erschienen in: Journal of Sol-Gel Science and Technology 1/2014

01.04.2014 | Original Paper

Single oscillator model and refractive index dispersion properties of ternary ZnO films by sol gel method

verfasst von: R. H. Al Orainy

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 1/2014

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

The optical constants of the NiMnZnO thin films prepared by spin-coating method were determined using transmittance and reflectance spectra. The optical band gap of the NiMnZnO thin films was found to be in the range of 3.20–3.35 eV. The refractive index dispersion of the NiMnZnO films obeys the single oscillator model. The dispersion energy and oscillator energy values of the NiMnZnO films were found to be in the range of 6.46–9.85 and 4.82–5.54 eV, respectively. The real and imaginary parts of the dielectric constants of the NiMnZnO films were determined. The reflectance spectra of the NiMnZnO films give a peak and the presence of this peak is due to the photoexcitation process, in which, the electrons are excited from valence band to the conduction band. The obtained results suggest that the optical constants and refractive dispersion energy parameters of the films are controlled by the molar ratios of NiMnZnO films.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Literatur
1.
Zurück zum Zitat Honga RJ, Jianga X, Heideb G, Szyszkaa B, Sittingera V, Wernera W (2003) Growth behaviours and properties of the ZnO: Al films prepared by reactive mid-frequency magnetron sputtering. J Cryst Growth 249:461–469CrossRef Honga RJ, Jianga X, Heideb G, Szyszkaa B, Sittingera V, Wernera W (2003) Growth behaviours and properties of the ZnO: Al films prepared by reactive mid-frequency magnetron sputtering. J Cryst Growth 249:461–469CrossRef
2.
Zurück zum Zitat Yakuphanoglu F (2010) Electrical characterization and device characterization of ZnO microring shaped films by sol–gel method. J Alloys Compd 507:184–189CrossRef Yakuphanoglu F (2010) Electrical characterization and device characterization of ZnO microring shaped films by sol–gel method. J Alloys Compd 507:184–189CrossRef
3.
Zurück zum Zitat Belyaev AE, Boltovets NS, Ivanov VN, Kamalov AB, Kapitanchuk LM, Konakova RV, Kudryk YY, Lytvyn OS, Milenin VV, Nasyrov MU (2008) Thermal Resistant TiBx–n–GaP Schottky diodes. Semiconductors 42:453–457CrossRef Belyaev AE, Boltovets NS, Ivanov VN, Kamalov AB, Kapitanchuk LM, Konakova RV, Kudryk YY, Lytvyn OS, Milenin VV, Nasyrov MU (2008) Thermal Resistant TiBx–n–GaP Schottky diodes. Semiconductors 42:453–457CrossRef
4.
Zurück zum Zitat Luna-Arredondo EJ, Maldonado A, Asomoza R, Acosta DR, Melendez-Lira MA, de la L. Olvera M (2005) Indium-doped ZnO thin films deposited by the sol–gel technique. Thin Solid Films 490:132–136CrossRef Luna-Arredondo EJ, Maldonado A, Asomoza R, Acosta DR, Melendez-Lira MA, de la L. Olvera M (2005) Indium-doped ZnO thin films deposited by the sol–gel technique. Thin Solid Films 490:132–136CrossRef
5.
Zurück zum Zitat Shinde SS, Shinde PS, Bhosale CH, Rajpure KY (2008) Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films. J Phys D Appl Phys 41:105109CrossRef Shinde SS, Shinde PS, Bhosale CH, Rajpure KY (2008) Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films. J Phys D Appl Phys 41:105109CrossRef
6.
Zurück zum Zitat Vaezi MR, Sadrnezhaad SK (2007) Improving the electrical conductance of chemically deposited zinc oxide thin films by Sn dopant. Mater Sci Eng, B 141:23–27CrossRef Vaezi MR, Sadrnezhaad SK (2007) Improving the electrical conductance of chemically deposited zinc oxide thin films by Sn dopant. Mater Sci Eng, B 141:23–27CrossRef
7.
Zurück zum Zitat Caglar Y, Ilican S, Caglar M, Yakuphanoglu F (2007) Effects of In, Al and Sn dopants on the structural and optical properties of ZnO thin films. Spectrochim Acta A 67:1113–1119CrossRef Caglar Y, Ilican S, Caglar M, Yakuphanoglu F (2007) Effects of In, Al and Sn dopants on the structural and optical properties of ZnO thin films. Spectrochim Acta A 67:1113–1119CrossRef
8.
Zurück zum Zitat Zhou HM, Yi DQ, Yu ZM, Xiao LR, Li J (2008) Preparation of aluminum doped zinc oxide films and the study of their microstructure, electrical and optical properties. Thin Solid Films 515:6909–6914CrossRef Zhou HM, Yi DQ, Yu ZM, Xiao LR, Li J (2008) Preparation of aluminum doped zinc oxide films and the study of their microstructure, electrical and optical properties. Thin Solid Films 515:6909–6914CrossRef
9.
Zurück zum Zitat Lin JP, Wu JM (2008) The effect of annealing processes on electronic properties of sol–gel derived Al-doped ZnO films. Appl Phys Lett 92:134103CrossRef Lin JP, Wu JM (2008) The effect of annealing processes on electronic properties of sol–gel derived Al-doped ZnO films. Appl Phys Lett 92:134103CrossRef
10.
Zurück zum Zitat Fathollahi V, Mohammadpour Amini M (2001) Sol–gel preparation of highly oriented gallium-doped zinc oxide thin films. Mater Lett 50:235–239CrossRef Fathollahi V, Mohammadpour Amini M (2001) Sol–gel preparation of highly oriented gallium-doped zinc oxide thin films. Mater Lett 50:235–239CrossRef
11.
Zurück zum Zitat Yakuphanoglu F (2006) Heat treatment effect on the single oscillator parameters and optical band gap of an organic thin film. Opt Mater 29:253CrossRef Yakuphanoglu F (2006) Heat treatment effect on the single oscillator parameters and optical band gap of an organic thin film. Opt Mater 29:253CrossRef
12.
Zurück zum Zitat Davis EA, Mott NF (1970) Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors. Philos Mag 22:903CrossRef Davis EA, Mott NF (1970) Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors. Philos Mag 22:903CrossRef
13.
Zurück zum Zitat Kima KJ, Park YR (2002) Spectroscopic ellipsometry study of optical transitions in Zn1−xCoxO alloys. Appl Phys Lett 81:1420CrossRef Kima KJ, Park YR (2002) Spectroscopic ellipsometry study of optical transitions in Zn1−xCoxO alloys. Appl Phys Lett 81:1420CrossRef
14.
Zurück zum Zitat Thilakan P, Radheep DM, Saravanakumar K, Sasikala G (2009) Deposition and characterization of nanocrystalline ZnO thin films by modified pulsed-spray-pyrolysis. Semicond Sci Technol 24:085020CrossRef Thilakan P, Radheep DM, Saravanakumar K, Sasikala G (2009) Deposition and characterization of nanocrystalline ZnO thin films by modified pulsed-spray-pyrolysis. Semicond Sci Technol 24:085020CrossRef
15.
Zurück zum Zitat Feng Y, Zhou Y, Liu Y, Zhang G, Zhang X (2006) Photoluminescence spectra of nano-structured ZnO thin films. J Lumin 119:233–236CrossRef Feng Y, Zhou Y, Liu Y, Zhang G, Zhang X (2006) Photoluminescence spectra of nano-structured ZnO thin films. J Lumin 119:233–236CrossRef
16.
Zurück zum Zitat Shinde VR, Gujar TP, Lokhande CD, Maneb RS, Han SH (2006) Mn doped and undoped ZnO films: a comparative structural, optical and electrical properties study. Mater Chem Phys 96:326–330CrossRef Shinde VR, Gujar TP, Lokhande CD, Maneb RS, Han SH (2006) Mn doped and undoped ZnO films: a comparative structural, optical and electrical properties study. Mater Chem Phys 96:326–330CrossRef
17.
Zurück zum Zitat Wang C, Ji Z, Xi J, Du J, Ye Z (2006) Fabrication and characteristics of the low-resistive p-type ZnO thin films by DC reactive magnetron sputtering. Mater Lett 60:912–914CrossRef Wang C, Ji Z, Xi J, Du J, Ye Z (2006) Fabrication and characteristics of the low-resistive p-type ZnO thin films by DC reactive magnetron sputtering. Mater Lett 60:912–914CrossRef
18.
Zurück zum Zitat Yakuphanoglu F, Viswanathan C (2007) Electrical conductivity and single oscillator model properties of amorphous CuSe semiconductor thin film. J Non Cryst Solids 353:2934CrossRef Yakuphanoglu F, Viswanathan C (2007) Electrical conductivity and single oscillator model properties of amorphous CuSe semiconductor thin film. J Non Cryst Solids 353:2934CrossRef
19.
Zurück zum Zitat DiDomenico M, Wemple SH (1969) Oxygen-octahedra ferroelectrics. I. Theory of electro-optical and nonlinear optical effects. J Appl Phys 40:720CrossRef DiDomenico M, Wemple SH (1969) Oxygen-octahedra ferroelectrics. I. Theory of electro-optical and nonlinear optical effects. J Appl Phys 40:720CrossRef
20.
Zurück zum Zitat Forouhi AR, Bloomer I (1988) Crystal-field interactions and spin reorientation in (Er1-xDyx)2Fe14B. Phys Rev B 38:1865CrossRef Forouhi AR, Bloomer I (1988) Crystal-field interactions and spin reorientation in (Er1-xDyx)2Fe14B. Phys Rev B 38:1865CrossRef
21.
Zurück zum Zitat Yakuphanoglu F, Durmus M, Okutan M, Koysal O, Ahsen V (2006) The refractive index dispersion and the optical constants of liquid crystal metal-free and nickel(II) phthalocyanines. Phys B 373:262–266CrossRef Yakuphanoglu F, Durmus M, Okutan M, Koysal O, Ahsen V (2006) The refractive index dispersion and the optical constants of liquid crystal metal-free and nickel(II) phthalocyanines. Phys B 373:262–266CrossRef
22.
Zurück zum Zitat El-Korashy A, El-Zahed H, Radwan M (2003) Size-dependent melting depression and lattice contraction of Bi nanocrystals. Phys B 334:53CrossRef El-Korashy A, El-Zahed H, Radwan M (2003) Size-dependent melting depression and lattice contraction of Bi nanocrystals. Phys B 334:53CrossRef
Metadaten
Titel
Single oscillator model and refractive index dispersion properties of ternary ZnO films by sol gel method
verfasst von
R. H. Al Orainy
Publikationsdatum
01.04.2014
Verlag
Springer US
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 1/2014
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-014-3272-1

Weitere Artikel der Ausgabe 1/2014

Journal of Sol-Gel Science and Technology 1/2014 Zur Ausgabe

    Marktübersichten

    Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.