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Erschienen in:
Electronic Properties of Dilute Bismides Kapitel lesen Erstes Kapitel lesen

2019 | OriginalPaper | Buchkapitel

10. Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning

verfasst von : C. M. Krammel, P. M. Koenraad, M. Roy, P. A. Maksym, Shumin Wang

Erschienen in: Bismuth-Containing Alloys and Nanostructures

Verlag: Springer Singapore

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Abstract

The structural properties of highly mismatched III-V semiconductors with small amounts of Bi are still not well understood at the atomic level. In this chapter, the potential of cross-sectional scanning tunneling microscopy (X-STM) to address these questions is reviewed. Special attention is paid to the X-STM contrast of isovalent impurities in the III-V system, which is discussed on the basis of theoretical STM images of the (110) surface using density functional theory (DFT) calculations. By comparing high-resolution X-STM images with complementary DFT calculations, Bi atoms down to the third monolayer below the InP (110) surface are identified. With this information, the Short-range ordering of Bi is studied, which reveals a strong tendency toward Bi pairing and clustering. In addition, the occurrence of Bi surface segregation at the interfaces of an InP/InP\(_{1-x}\)Bi\(_{x}\)/InP quantum well with a Bi concentration of \(2.4~\%\) is discussed.

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Vorheriges Kapitel Surface Mediated Growth of Dilute Bismides
Nächstes Kapitel Optical Properties of Dilute Bismides
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Metadaten
Titel
Structural Properties of Bi Containing InP Films Explored by Cross-Sectional Scanning
verfasst von
C. M. Krammel
P. M. Koenraad
M. Roy
P. A. Maksym
Shumin Wang
Copyright-Jahr
2019
Verlag
Springer Singapore
Buch
Bismuth-Containing Alloys and Nanostructures

Print ISBN: 978-981-13-8077-8

Electronic ISBN: 978-981-13-8078-5

Copyright-Jahr: 2019

DOI
https://doi.org/10.1007/978-981-13-8078-5_10

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