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Erschienen in: Journal of Nanoparticle Research 3/2012

01.03.2012 | Research Paper

Structure and electronic properties of boron nitride sheet with grain boundaries

verfasst von: Zhiguo Wang

Erschienen in: Journal of Nanoparticle Research | Ausgabe 3/2012

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Abstract

Using first-principles calculations, the structure, stability, and electronic properties of BN sheets with grain boundaries (GBs) are investigated. Two types of GBs, i.e., zigzag- and armchair-oriented GBs, are considered. Simulation results reveal that the zigzag-oriented GBs are more stable than the armchair-oriented ones. The GBs induce defect levels located within the band gap, which must be taken into account when building nanoelectronic devices.

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Literatur
Zurück zum Zitat Azevedo S, Kaschny JR, de Castilho CMC, Mota FD (2007) A theoretical investigation of defects in a boron nitride monolayer. Nanotechnology 18:495–707CrossRef Azevedo S, Kaschny JR, de Castilho CMC, Mota FD (2007) A theoretical investigation of defects in a boron nitride monolayer. Nanotechnology 18:495–707CrossRef
Zurück zum Zitat Blase X, Rubio A, Louie SG, Cohen ML (1994) Stability and band-gap constancy of boron-nitride nanotubes. Europhys Lett 28:335–340CrossRef Blase X, Rubio A, Louie SG, Cohen ML (1994) Stability and band-gap constancy of boron-nitride nanotubes. Europhys Lett 28:335–340CrossRef
Zurück zum Zitat Cervenka J, Katsnelson MI, Flipse CFJ (2009) Room-temperature ferromagnetism in graphite driven by two-dimensional networks of point defects. Nat Phys 5:840–844CrossRef Cervenka J, Katsnelson MI, Flipse CFJ (2009) Room-temperature ferromagnetism in graphite driven by two-dimensional networks of point defects. Nat Phys 5:840–844CrossRef
Zurück zum Zitat Cockayne E, Rutter GM, Guisinger NP, Crain JN, First PN, Stroscio JA (2011) Grain boundary loops in graphene. Phys Rev B 83:195425CrossRef Cockayne E, Rutter GM, Guisinger NP, Crain JN, First PN, Stroscio JA (2011) Grain boundary loops in graphene. Phys Rev B 83:195425CrossRef
Zurück zum Zitat Gao L, Guest JR, Guisinger NP (2010) Epitaxial graphene on Cu(111). Nano Lett 10:3512–3516CrossRef Gao L, Guest JR, Guisinger NP (2010) Epitaxial graphene on Cu(111). Nano Lett 10:3512–3516CrossRef
Zurück zum Zitat Geim AK, Novoselov KS (2007) The rise of graphene. Nat Mater 6:183–191CrossRef Geim AK, Novoselov KS (2007) The rise of graphene. Nat Mater 6:183–191CrossRef
Zurück zum Zitat Grantab R, Shenoy VB, Ruoff RS (2010) Anomalous strength characteristics of tilt grain boundaries in graphene. Science 330:946–948CrossRef Grantab R, Shenoy VB, Ruoff RS (2010) Anomalous strength characteristics of tilt grain boundaries in graphene. Science 330:946–948CrossRef
Zurück zum Zitat Jin C, Lin F, Suenaga K, Iijima S (2009) Fabrication of a freestanding boron nitride single layer and its defect assignments. Phys Rev Lett 102:195505CrossRef Jin C, Lin F, Suenaga K, Iijima S (2009) Fabrication of a freestanding boron nitride single layer and its defect assignments. Phys Rev Lett 102:195505CrossRef
Zurück zum Zitat Kim KK, Hsu, A, Jia XT, Kim SM, Shi YM, Hofmann M, Nezich D, Rodriguez-Nieva JF, Dresselhaus M, Palacios T, Kong, J (2011a) Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. Nano Lett. doi:10.1021/nl203249a Kim KK, Hsu, A, Jia XT, Kim SM, Shi YM, Hofmann M, Nezich D, Rodriguez-Nieva JF, Dresselhaus M, Palacios T, Kong, J (2011a) Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. Nano Lett. doi:10.​1021/​nl203249a
Zurück zum Zitat Kim K, Lee Z, Regan W, Kisielowski C, Crommie MF, Zettl A (2011b) Grain boundary mapping in polycrystalline graphene. ACS Nano 5:2142–2146CrossRef Kim K, Lee Z, Regan W, Kisielowski C, Crommie MF, Zettl A (2011b) Grain boundary mapping in polycrystalline graphene. ACS Nano 5:2142–2146CrossRef
Zurück zum Zitat Kleinman L, Bylander DM (1982) Efficacious form for model pseudopotentials. Phys Rev Lett 48:1425–1428CrossRef Kleinman L, Bylander DM (1982) Efficacious form for model pseudopotentials. Phys Rev Lett 48:1425–1428CrossRef
Zurück zum Zitat Lahiri J, Lin Y, Bozkurt P, Oleynik II, Batzill M (2010) An extended defect in graphene as a metallic wire. Nat Nanotechnol 5:326–329CrossRef Lahiri J, Lin Y, Bozkurt P, Oleynik II, Batzill M (2010) An extended defect in graphene as a metallic wire. Nat Nanotechnol 5:326–329CrossRef
Zurück zum Zitat Li XS, Cai WW, An JH, Kim S, Nah J, Yang DX, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS (2009) Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324:1312–1314CrossRef Li XS, Cai WW, An JH, Kim S, Nah J, Yang DX, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS (2009) Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 324:1312–1314CrossRef
Zurück zum Zitat Li XS, Magnuson CW, Venugopal A, Tromp RM, Hannon JB, Vogel EM, Colombo L, Ruoff RS (2011) Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper. J Am Chem Soc 133:2816–2819CrossRef Li XS, Magnuson CW, Venugopal A, Tromp RM, Hannon JB, Vogel EM, Colombo L, Ruoff RS (2011) Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper. J Am Chem Soc 133:2816–2819CrossRef
Zurück zum Zitat Liu YY, Yakobson BI (2010) Cones, pringles, and grain boundary landscapes in graphene topology. Nano Lett 10:2178–2183CrossRef Liu YY, Yakobson BI (2010) Cones, pringles, and grain boundary landscapes in graphene topology. Nano Lett 10:2178–2183CrossRef
Zurück zum Zitat Malola S, Hakkinen H, Koskinen P (2010) Structural, chemical, and dynamical trends in graphene grain boundaries. Phys Rev B 81:165447CrossRef Malola S, Hakkinen H, Koskinen P (2010) Structural, chemical, and dynamical trends in graphene grain boundaries. Phys Rev B 81:165447CrossRef
Zurück zum Zitat Monkhorst HJ, Pack JD (1976) Special points for brillouin-zone integrations. Phys Rev B 13:5188–5192CrossRef Monkhorst HJ, Pack JD (1976) Special points for brillouin-zone integrations. Phys Rev B 13:5188–5192CrossRef
Zurück zum Zitat Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA (2004) Electric field effect in atomically thin carbon films. Science 306:666–669CrossRef Novoselov KS, Geim AK, Morozov SV, Jiang D, Zhang Y, Dubonos SV, Grigorieva IV, Firsov AA (2004) Electric field effect in atomically thin carbon films. Science 306:666–669CrossRef
Zurück zum Zitat Paine RT, Narula CK (1990) Synthetic routes to boron-nitride. Chem Rev 90:73–91CrossRef Paine RT, Narula CK (1990) Synthetic routes to boron-nitride. Chem Rev 90:73–91CrossRef
Zurück zum Zitat Park CH, Louie SG (2008) Energy gaps and stark effect in boron nitride nanoribbons. Nano Lett 8:2200–2203CrossRef Park CH, Louie SG (2008) Energy gaps and stark effect in boron nitride nanoribbons. Nano Lett 8:2200–2203CrossRef
Zurück zum Zitat Paszkowicz W, Pelka JB, Knapp M, Szyszko T, Podsiadlo S (2002) Lattice parameters and anisotropic thermal expansion of hexagonal boron nitride in the 10–297.5 K temperature range. Appl PhysA 75:431–435CrossRef Paszkowicz W, Pelka JB, Knapp M, Szyszko T, Podsiadlo S (2002) Lattice parameters and anisotropic thermal expansion of hexagonal boron nitride in the 10–297.5 K temperature range. Appl PhysA 75:431–435CrossRef
Zurück zum Zitat Perdew JP, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 77:3865–3868CrossRef Perdew JP, Burke K, Ernzerhof M (1996) Generalized gradient approximation made simple. Phys Rev Lett 77:3865–3868CrossRef
Zurück zum Zitat Rubio A, Corkill JL, Cohen ML (1994) Theory of graphitic boron-nitride nanotubes. Phys Rev B 49:5081–5084CrossRef Rubio A, Corkill JL, Cohen ML (1994) Theory of graphitic boron-nitride nanotubes. Phys Rev B 49:5081–5084CrossRef
Zurück zum Zitat Saito Y, Maida M (1999) Square, pentagon, and heptagon rings at BN nanotube tips. Phys Chem A 103:1292CrossRef Saito Y, Maida M (1999) Square, pentagon, and heptagon rings at BN nanotube tips. Phys Chem A 103:1292CrossRef
Zurück zum Zitat Sankey OF, Niklewski DJ (1989) Abinitio multicenter tight-binding model for molecular-dynamics simulations and other applications in covalent systems. Phys Rev B 40:3979–3995CrossRef Sankey OF, Niklewski DJ (1989) Abinitio multicenter tight-binding model for molecular-dynamics simulations and other applications in covalent systems. Phys Rev B 40:3979–3995CrossRef
Zurück zum Zitat Si MS, Xue DS (2007) Magnetic properties of vacancies in a graphitic boron nitride sheet by first-principles pseudopotential calculations. Phys Rev B 75:193409CrossRef Si MS, Xue DS (2007) Magnetic properties of vacancies in a graphitic boron nitride sheet by first-principles pseudopotential calculations. Phys Rev B 75:193409CrossRef
Zurück zum Zitat Si MS, Li JY, Shi HG, Niu XN, Xue DS (2009) Divacancies in graphitic boron nitride sheets. Europhys Lett 86:46002CrossRef Si MS, Li JY, Shi HG, Niu XN, Xue DS (2009) Divacancies in graphitic boron nitride sheets. Europhys Lett 86:46002CrossRef
Zurück zum Zitat Soler JM, Artacho E, Gale JD, Garcia A, Junquera J, Ordejon P, Sanchez-Portal D (2002) The SIESTA method for ab initio order-N materials simulation. J Phys Condes Matter 14:2745–2779CrossRef Soler JM, Artacho E, Gale JD, Garcia A, Junquera J, Ordejon P, Sanchez-Portal D (2002) The SIESTA method for ab initio order-N materials simulation. J Phys Condes Matter 14:2745–2779CrossRef
Zurück zum Zitat Terrones M, Charlier JC, Gloter A, Cruz-Silva E, Terres E, Li YB, Vinu A, Zanolli Z, Dominguez JM, Terrones H, Bando Y, Golberg D (2008) Experimental and theoretical studies suggesting the possibility of metallic boron nitride edges in porous nanourchins. Nano Lett 8:1026–1032CrossRef Terrones M, Charlier JC, Gloter A, Cruz-Silva E, Terres E, Li YB, Vinu A, Zanolli Z, Dominguez JM, Terrones H, Bando Y, Golberg D (2008) Experimental and theoretical studies suggesting the possibility of metallic boron nitride edges in porous nanourchins. Nano Lett 8:1026–1032CrossRef
Zurück zum Zitat Topsakal M, Akturk E, Ciraci S (2009) First-principles study of two- and one-dimensional honeycomb structures of boron nitride. Phys Rev B 79:115442CrossRef Topsakal M, Akturk E, Ciraci S (2009) First-principles study of two- and one-dimensional honeycomb structures of boron nitride. Phys Rev B 79:115442CrossRef
Zurück zum Zitat Troullier N, Martins JL (1991) Efficient pseudopotentials for plane-wave calculations. Phys Rev B 43:1993–2006CrossRef Troullier N, Martins JL (1991) Efficient pseudopotentials for plane-wave calculations. Phys Rev B 43:1993–2006CrossRef
Zurück zum Zitat Yazyev OV, Louie SG (2010a) Topological defects in graphene: dislocations and grain boundaries. Phys Rev B 81:195420CrossRef Yazyev OV, Louie SG (2010a) Topological defects in graphene: dislocations and grain boundaries. Phys Rev B 81:195420CrossRef
Zurück zum Zitat Yazyev OV, Louie SG (2010b) Electronic transport in polycrystalline graphene. Nat Mater 9:806–809CrossRef Yazyev OV, Louie SG (2010b) Electronic transport in polycrystalline graphene. Nat Mater 9:806–809CrossRef
Metadaten
Titel
Structure and electronic properties of boron nitride sheet with grain boundaries
verfasst von
Zhiguo Wang
Publikationsdatum
01.03.2012
Verlag
Springer Netherlands
Erschienen in
Journal of Nanoparticle Research / Ausgabe 3/2012
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-012-0756-1

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