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Erschienen in:
Surface-Potential-Based Compact Model of Bulk MOSFET Kapitel lesen Erstes Kapitel lesen

2010 | OriginalPaper | Buchkapitel

11. Surface-Potential-Based MOS Varactor Model

verfasst von : Zeqin Zhu, Gennady Gildenblat, James Victory, Colin C. McAndrew

Erschienen in: Compact Modeling

Verlag: Springer Netherlands

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Abstract

A surface-potential-based scalable model for MOS varactors was developed jointly by Arizona State University, Sentinel IC Technologies, Jazz Semiconductor, and Freescale Semiconductor to facilitate RF CMOS design. We give details of the model, which is based on PSP, and show how it fits key device characteristics, including capacitance, gate current, and quality factor as functions of voltage, frequency, and geometry, for several technologies. Recent advances in the parameter extraction procedure are also reviewed. The model is implemented in Verilog-A and provides a robust and accurate description of MOS varactors, including their RF performance. A VCO design application is presented to illustrate the capabilities of the new model.

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Vorheriges Kapitel The JUNCAP2 Model for Junction Diodes
Nächstes Kapitel Modeling of On-chip RF Passive Components
Fußnoten
1
We denote the effective and drawn dimensions as L, W and L g , W g , respectively.
 
2
MOSVAR model parameters are denoted by capital bold font.
 
3
As all modern compact models, MOSVAR is charge based. However, it is convenient to discuss parasitic elements and parameter extraction in terms of capacitances.
 
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Metadaten
Titel
Surface-Potential-Based MOS Varactor Model
verfasst von
Zeqin Zhu
Gennady Gildenblat
James Victory
Colin C. McAndrew
Copyright-Jahr
2010
Verlag
Springer Netherlands
Buch
Compact Modeling

Print ISBN: 978-90-481-8613-6

Electronic ISBN: 978-90-481-8614-3

Copyright-Jahr: 2010

DOI
https://doi.org/10.1007/978-90-481-8614-3_11

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