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2019 | OriginalPaper | Buchkapitel

3. Techniques Utilised in Materials Growth and Materials and Device Characterisation

verfasst von : A. A. Ojo, W. M. Cranton, I. M. Dharmadasa

Erschienen in: Next Generation Multilayer Graded Bandgap Solar Cells

Verlag: Springer International Publishing

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Abstract

Further to the semiconductor material and electronic properties discussed in Chap. 2, the evaluation of semiconductor materials can be examined for structural, morphological, compositional, optical and electronic properties to facilitate research towards optimisation. This chapter describes the physics and the basic functionality of X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectroscopy, ultraviolet-visible (UV-Vis) spectroscopy and photoelectrochemical (PEC) cell measurement equipment. Current-voltage (I-V) and capacitance-voltage (C-V) techniques were utilised for the evaluation to facilitate research towards solar cell device performance in order to understand the factors affecting the performance of device materials.

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Vorheriges Kapitel Photovoltaic Solar Cells: Materials, Concepts and Devices

Nächstes Kapitel ZnS Deposition and Characterisation

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Titel: Techniques Utilised in Materials Growth and Materials and Device Characterisation
verfasst von: A. A. Ojo
W. M. Cranton
I. M. Dharmadasa
Verlag: Springer International Publishing
Buch: Next Generation Multilayer Graded Bandgap Solar Cells
Print ISBN: 978-3-319-96666-3

Electronic ISBN: 978-3-319-96667-0

Copyright-Jahr: 2019
DOI: https://doi.org/10.1007/978-3-319-96667-0_3