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Optical and Quantum Electronics

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01.11.2022

The effect of tungsten (W) concentration and sulfuration on morphology and optical properties and tuning of the band gap of 2D-MoS₂ thin films

verfasst von: S. Faraji, M. M. Bagheri-Mohagheghi, A. shirpay

Erschienen in: Optical and Quantum Electronics | Ausgabe 11/2022

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Abstract

In this study, two dimensions of MoS₂:W thin films were deposited by spray pyrolysis on a glass substrate at T = 400 °C by changing the concentration of tungsten trioxide as [W/Mo] = 0.01, 0.05, 0.15, and, 0.2. The annealing process under sulfuration for MoS₂:W thin films were studied with a sulfur concentration ratio of [S/Mo] = 2. The effect of tungsten concentration and annealing on the structural, optical absorbance, and tunning of the band gap of MoS₂:W thin films was studied. The XRD results showed that the thin films before sulfuration had an orthorhombic structure and after sulfurization a hexagonal structure. Also, the crystallite size increased as considerably with increasing tungsten (W) concentration up to [W/Mo] = 0.15. The surface images of thin films by FE-SEM showed that the morphology of crystals changed after annealing and sulfuration. Also, the behavior of optical absorption coefficient (α) and extinction coefficient (k) in terms of wavelength in the UV–Vis region has been studied. The energy gap after annealing increases with increasing tungsten concentration. The optical absorption analysis showed that the direct optical gap of the thin films varies in the range ΔE_g = 0.66 before annealing and in the range of ΔE_g = 0.46 after annealing under sulfurization.

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Titel: The effect of tungsten (W) concentration and sulfuration on morphology and optical properties and tuning of the band gap of 2D-MoS2 thin films
verfasst von: S. Faraji
M. M. Bagheri-Mohagheghi
A. shirpay
Publikationsdatum: 01.11.2022
Verlag: Springer US
Erschienen in: Optical and Quantum Electronics / Ausgabe 11/2022
Print ISSN: 0306-8919
Elektronische ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-022-04115-7

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