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Journal of Sol-Gel Science and Technology
Erschienen in: Journal of Sol-Gel Science and Technology 1/2018

25.10.2017 | Original Paper: Devices based on sol-gel or hybrid materials

The study of the CdS film and the carrier transport characteristics of CdS/CuInS2 pn junction

verfasst von: Zhuo Chen, Xingzuo Liu, Yue Zhao, Xiaoyan Liang, Yigang Chen, Linjun Wang, Yue Shen

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 1/2018

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Abstract

Cadmium sulfide (CdS) films were grown by chemical-bath deposition (CBD). Some films were annealed at 300 °C in N2 atmosphere for 30 min. The diffraction peaks related to the (111) crystal plane of wurtzite CdS phase appeared in as prepared CdS films. After annealing, the diffraction peaks related to (220) and (311) crystal planes of wurtzite CdS phase came out. Meanwhile, the roughness, the crystallite sizes and the Cd/S ratio of annealed CdS films increased, which might be due to the volatilization of S element. Furthermore, the absolute values of photocurrent of different CdS films may be related to the interaction between the electron and the intrinsic defects in CdS film and the absorption capacity for incident light. Moreover, the I-V characteristics for all FTO/CdS/CuInS2/Mo hetero-junctions exhibited successful rectifying characteristic, and the corresponding electrical parameters may be attributed to the thickness of CdS films and the intrinsic defects in p-n junction.

Graphical abstract

The figure is the photocurrent-time curves of CdS thin films prepared by different time. https://static-content.springer.com/image/art%3A10.1007%2Fs10971-017-4525-6/MediaObjects/10971_2017_4525_Figa_HTML.gif
Vorheriger Artikel Hydrothermal growth of undoped and boron doped ZnO nanorods as a photoelectrode for solar water splitting applications
Nächster Artikel ZrO2-coated stainless steel mesh with underwater superoleophobicity by electrophoretic deposition for durable oil/water separation

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Metadaten
Titel
The study of the CdS film and the carrier transport characteristics of CdS/CuInS2 pn junction
verfasst von
Zhuo Chen
Xingzuo Liu
Yue Zhao
Xiaoyan Liang
Yigang Chen
Linjun Wang
Yue Shen
Publikationsdatum
25.10.2017
Verlag
Springer US
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 1/2018
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-017-4525-6

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