nach oben

Journal of Materials Science

Erschienen in:

10.05.2018 | Electronic materials

Thermoelectric performance of Te doped with As and alloyed with Se

verfasst von: Manman Yang, Taichao Su, Hongyu Zhu, Shangsheng Li, Meihua Hu, Qiang Hu, Hongan Ma, Xiaopeng Jia

Erschienen in: Journal of Materials Science | Ausgabe 16/2018

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config

KI-gestützte Suche

Aus

Abstract

Recently, it was found that element semiconductor tellurium (Te) behaved a high thermoelectric (TE) performance. Further enhancement of its TE performance was expected in decreasing phonon thermal conductivity. In this paper, element semiconductor Te doped with arsenic (As) and alloyed with selenium (Se) was prepared by one-step high-pressure method. Trace amounts of As doping could increase the carrier concentration of Te effectively and thereby optimize its power factor. The phonon thermal conductivity of Te was depressed sharply, due to the effect of high-pressure compression (introducing dislocations, lattice curvatures and nanograins) and Se alloying (introducing point defects and crystal dislocation). The beneficial effect of As doping on the power factor, high-pressure compression and Se alloying on thermal conductivity led to a peak ZT of 0.81 at 540 K for Te doped with 0.5 mol% As and alloyed with 10 mol% Se.

Vorheriger Artikel Effects of Bi3+ ions on luminescence properties of ZnWO4:Eu3+, Sm3+, Bi3+ nanorods

Nächster Artikel Characterization and performance of porous photocatalytic ceramic membranes coated with TiO2 via different dip-coating routes

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Nur mit Berechtigung zugänglich

Sootsman J et al (2009) New and old concepts in thermoelectric materials. Angew Chem Int Ed Engl 48:8616–8639CrossRef

Zhao L et al (2016) Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe. Science 351:141–144CrossRef

Zebarjadi M et al (2012) Perspectives on thermoelectrics from fundamentals to device applications. Energy Environ Sci 5:5147–5162CrossRef

Heremans J et al (2008) Enhancement of thermoelectric efficiency in PbTe by distortion of the electronic density of states. Science 321:554–557CrossRef

Lin S et al (2016) Tellurium as a high-performance elemental thermoelectric. Nat Commun 7:10287CrossRef

Zhu P et al (2005) Enhanced thermoelectric properties of PbTe alloyed with Sb₂Te₃. J Phys Condens Matter 17:7319–7326CrossRef

Hong M et al (2016) N-type Bi₂Te_3–xSe_x nanoplates with enhanced thermoelectric efficiency driven by wide-frequency phonon scatterings and synergistic carrier scattering. ACS Nano 10:4719–4727CrossRef

Lin S et al (2017) Sb induces both doping and precipitation for improving the thermoelectric performance of elemental Te. Inorg Chem Front 4:1066–1072CrossRef

Tian Z et al (2012) Phonon conduction in PbSe, PbTe, and PbTe_1−xSe_x from first-principles calculations. Phys Rev B 85:184303CrossRef

10.

Qian X et al (2017) Enhancing thermoelectric performance of n-type PbSe via additional meso-scale phonon scattering. Inorg Chem Front 4:719–726CrossRef

11.

Poudel B et al (2008) High-thermoelectric performance of nanostructured bismuth antimony telluride bulk alloys. Science 320:634–638CrossRef

12.

Liu H et al (2017) High-thermoelectric performance of TiO_2−x fabricated under high pressure at high temperatures. J Materiomics 3:286–292CrossRef

13.

Cahill D et al (1992) Lower limit to the thermal conductivity of disordered crystals. Phys Rev B 46:6131CrossRef

14.

Yang M et al (2017) High-pressure synthesis and thermoelectric performance of tellurium doped with bismuth. J Mater Sci 52:10526–10532. https://doi.org/10.1007/s10853-017-1180-9 CrossRef

15.

Kim H et al (2015) Characterization of Lorenz number with Seebeck coefficient measurement. APL Mater 3:105

16.

Liu W et al (2007) Enhanced thermoelectric properties in CoSb3-xTex alloys prepared by mechanical alloying and spark plasma sintering. J Appl Phys 102:11235

17.

Hu L et al (2014) Shifting up the optimum figure of merit of p-type bismuth telluride-based thermoelectric materials for power generation by suppressing intrinsic conduction. NPG Asia Mater 6:88CrossRef

18.

Peng H et al (2014) Elemental tellurium as a chiral p-type thermoelectric material. Phys Rev B 89:195206CrossRef

19.

Parker D et al (2011) Potential thermoelectric performance from optimization of hole-doped Bi₂Se₃. Phys Rev X 1:4109–4112

20.

Callaway J et al (1959) Model for lattice thermal conductivity at low temperatures. Phys Rev 113:436–441CrossRef

21.

Callaway J et al (1960) Effect of point imperfections on lattice thermal conductivity. Phys Rev 1960(120):1149CrossRef

22.

Abelesv B et al (1963) Lattice thermal conductivity of disordered semiconductor alloys at high temperatures. Phys Rev 131:1906–1911CrossRef

23.

Slack G et al (1957) Effect of isotopes on low-temperature thermal conductivity. Phys Rev 105:829–831CrossRef

24.

Yang J et al (2004) Strain field fluctuation effects on lattice thermal conductivity of ZrNiSn-based thermoelectric compounds. Appl Phys Lett 85:1140–1142CrossRef

Titel: Thermoelectric performance of Te doped with As and alloyed with Se
verfasst von: Manman Yang
Taichao Su
Hongyu Zhu
Shangsheng Li
Meihua Hu
Qiang Hu
Hongan Ma
Xiaopeng Jia
Publikationsdatum: 10.05.2018
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 16/2018
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-018-2389-y

Premium Partner

Marktübersichten

Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.

Zur Marktübersicht

Springer Professional

Abstract

Bitte loggen Sie sich ein, um Zugang zu Ihrer Lizenz zu erhalten.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Technik"

Weitere Artikel der Ausgabe 16/2018

Effects of Bi3+ ions on luminescence properties of ZnWO4:Eu3+, Sm3+, Bi3+ nanorods

Microstructural, thermal and rheological correlations to mechanical response of polyamide-6(glass filled)/polyetherimide blend: effect of ethylene-octene copolymer on toughening of blend

Decoupling of water and oxygen diffusion phenomena in order to prove the occurrence of thermo-oxidation during hygrothermal aging of thermosetting resins for RTM composite applications

Synthesis and characterization of functionalized graphene oxide/polyacrylamide nanocomposites using physical adsorbing and chemical grafting and their applications in polyimide matrix

Effects of discharge-forming gases on the antibacterial sensitivity of plasma-reduced silver impregnated in natural zeolites

Metastable monotectic phase separation in Co–Cu alloys

Premium Partner

Marktübersichten