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Erschienen in:
1988 | OriginalPaper | Buchkapitel
Transformation of Radiation Induced Defect Centers as a Probe of Molecular Diffusion in a-SiO2
verfasst von : R. L. Pfeffer
Erschienen in: The Physics and Technology of Amorphous SiO2
Verlag: Springer US
Enthalten in: Professional Book Archive
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An important cause of ionizing radiation induced degradation in MOS integrated circuit devices is the buildup of trapped positive charge in gate and field oxides1. Recent electron paramagnetic resonance (EPR) studies2 have identified virtually all trapping sites in the oxides as E′ centers (paramagnetic bridging oxygen vacancies). The formation of these vacancies during irradiation by energetic photons or electrons is predominantly by ionization processes3, i.e., bond rearrangements after electron-electron collisions, rather than displacements from electron-atom collisions.